Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRFIBC20G — MOSFET N-CH 600V 1.7A TO220FP

Производитель	Vishay/Siliconix

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	4.4 Ohm @ 1A, 10V
Drain to Source Voltage (Vdss)	600V
Gate Charge (Qg) @ Vgs	18nC @ 10V
Current - Continuous Drain (Id) @ 25° C	1.7A
Input Capacitance (Ciss) @ Vds	350pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	30W
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Встречается под наим.	*IRFIBC20G

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRL3402L	Vishay/Siliconix	MOSFET N-CH 20V 85A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 78nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 85A · Input Capacitance (Ciss) @ Vds: 3300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFZ34EL	Vishay/Siliconix	MOSFET N-CH 60V 28A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Доп. информация Искать в поставщиках
	IRF3205ZSTRL	Vishay/Siliconix	MOSFET N-CH 55V 75A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFU4105ZTRR	Vishay/Siliconix	MOSFET N-CH 55V 30A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 740pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 48W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFR9010TRPBF	Vishay/Siliconix	MOSFET P-CH 50V 5.3A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFI710G	Vishay/Siliconix	MOSFET N-CH 400V 1.6A TO220FP Серия: HEXFET® · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 1.6A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00	Доп. информация Искать в поставщиках
	IRCZ44PBF	Vishay/Siliconix	MOSFET N-CH 60V 50A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFR9010	Vishay/Siliconix	MOSFET P-CH 50V 5.3A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRL2203STRR	Vishay/Siliconix	MOSFET N-CH 30V 100A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 110nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 3500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFBG30L	Vishay/Siliconix	MOSFET N-CH 1000V 3.1A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Доп. информация Искать в поставщиках
	IRFIB7N50A	Vishay/Siliconix	MOSFET N-CH 500V 6.6A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 520 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 1423pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00	Доп. информация Искать в поставщиках
	IRC830	Vishay/Siliconix	MOSFET N-CH 500V 4.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 610pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRL530L	Vishay/Siliconix	MOSFET N-CH 100V 13A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 28nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 930pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFD020PBF	Vishay/Siliconix	MOSFET N-CH 50V 2.4A 4-DIP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFIB6N60APBF	Vishay/Siliconix	MOSFET N-CH 600V 5.5A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFB9N30APBF	Vishay/Siliconix	MOSFET N-CH 300V 9.3A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFSL31N20DTRR	Vishay/Siliconix	MOSFET N-CH 200V 31A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 2370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF9Z30S	Vishay/Siliconix	MOSFET P-CH 50V 18A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRFB9N30A	Vishay/Siliconix	MOSFET N-CH 300V 9.3A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFZ20	Vishay/Siliconix	MOSFET N-CH 50V 15A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A. 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 850pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRFS9N60ATRR	Vishay/Siliconix	MOSFET N-CH 600V 9.2A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.2A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFIB7N50APBF	Vishay/Siliconix	MOSFET N-CH 500V 6.6A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 520 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 1423pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRC530PBF	Vishay/Siliconix	MOSFET N-CH 100V 14A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFZ40	Vishay/Siliconix	MOSFET N-CH 50V 35A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRFZ14STRL	Vishay/Siliconix	MOSFET N-CH 60V 10A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках

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