Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 78nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 85A  •  Input Capacitance (Ciss) @ Vds: 3300pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 110W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Встречается под наим.: *IRL3402L