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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
2N70002N7000STMicroelectronicsMOSFET N-CH 60V 350MA TO-92
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 2nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 350mA  ·  Input Capacitance (Ciss) @ Vds: 43pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 7,31
до 68,57
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2N70002N7000Fairchild SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 4,18
до 27,86
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2N7000,1262N7000,126NXP SemiconductorsMOSFET N-CH 60V 300MA TO-92
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N7000BU2N7000BUFairchild SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 30pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 5,14Доп. информация
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2N7000_D26Z2N7000_D26ZFairchild SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 3,48
до 6,13
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2N7000_D74Z2N7000_D74ZFairchild SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 6,13Доп. информация
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2N7000_D75Z2N7000_D75ZFairchild SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 7,31Доп. информация
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2N7000G2N7000GON SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 9,05
до 50,35
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2N7000RLRA2N7000RLRAON SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N7000RLRAG2N7000RLRAGON SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 6,65
до 9,58
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2N7000RLRMG2N7000RLRMGON SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 9,05Доп. информация
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2N7000RLRPG2N7000RLRPGON SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N7000TA2N7000TAFairchild SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 30pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
от 7,07Доп. информация
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2N70022N7002STMicroelectronicsMOSFET N-CH 60V 200MA SOT-23-3
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 2nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 43pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3
от 4,10
до 6,43
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2N70022N7002Fairchild SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 4,20
до 18,21
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2N7002,2152N7002,215NXP SemiconductorsMOSFET N-CH 60V 300MA SOT-23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 3,14
до 34,28
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2N7002-72N7002-7Diodes IncMOSFET N-CH 60V 115MA SOT23-3
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002-7-F2N7002-7-FDiodes IncMOSFET N-CH 60V 115MA SOT23-3
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 4,49
до 36,43
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2N7002_D87Z2N7002_D87ZFairchild SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 2,65Доп. информация
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2N7002E,2152N7002E,215NXP SemiconductorsMOSFET N CH TRENCH 60V SOT23
Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 385mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 4,82
до 40,71
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2N7002E-7-F2N7002E-7-FDiodes IncMOSFET N-CH 60V 240MA SOT23-3
Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 240mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 14,46Доп. информация
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2N7002E-T1-E32N7002E-T1-E3Vishay/SiliconixMOSFET N-CH 60V 240MA SOT-23
Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 240mA  ·  Input Capacitance (Ciss) @ Vds: 21pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 22,50Доп. информация
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2N7002ET1G2N7002ET1GON SemiconductorMOSFET N-CH 60V 260MA SOT-23
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.81nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 4,44
до 48,21
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2N7002ET3GON SemiconductorMOSFET N-CH 60V 260MA SOT-23
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.81nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 2,32Доп. информация
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2N7002F,2152N7002F,215NXP SemiconductorsMOSFET N-CH 60V 475MA SOT23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 475mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 2,73Доп. информация
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