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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
IRFBC20 | Vishay/Siliconix | MOSFET N-CH 600V 2.2A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFZ34ESTRL | Vishay/Siliconix | MOSFET N-CH 60V 28A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IRFZ24L | Vishay/Siliconix | MOSFET N-CH 60V 17A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF9Z20PBF | Vishay/Siliconix | MOSFET P-CH 50V 9.7A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 480pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFZ40 | Vishay/Siliconix | MOSFET N-CH 50V 35A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR9010 | Vishay/Siliconix | MOSFET P-CH 50V 5.3A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFIB6N60APBF | Vishay/Siliconix | MOSFET N-CH 600V 5.5A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFI710G | Vishay/Siliconix | MOSFET N-CH 400V 1.6A TO220FP Серия: HEXFET® · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 1.6A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках | |
IRC830 | Vishay/Siliconix | MOSFET N-CH 500V 4.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 610pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFPC30 | Vishay/Siliconix | MOSFET N-CH 600V 4.3A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | Доп. информация Искать в поставщиках | ||
IRC730PBF | Vishay/Siliconix | MOSFET N-CH 400V 5.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | Доп. информация Искать в поставщиках | ||
IRFIB8N50K | Vishay/Siliconix | MOSFET N-CH 500V 6.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | Доп. информация Искать в поставщиках | ||
IRC840PBF | Vishay/Siliconix | MOSFET N-CH 500V 8A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | Доп. информация Искать в поставщиках | ||
IRFSL31N20DTRR | Vishay/Siliconix | MOSFET N-CH 200V 31A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 2370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFP360 | Vishay/Siliconix | MOSFET N-CH 400V 23A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 4500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках | |
IRFZ44RSTRR | Vishay/Siliconix | MOSFET N-CH 60V 50A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF3205ZSTRL | Vishay/Siliconix | MOSFET N-CH 55V 75A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR010TRR | Vishay/Siliconix | MOSFET N-CH 50V 8.2A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.2A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF5801 | Vishay/Siliconix | MOSFET N-CH 200V 600MA 6-TSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 3.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 600mA · Input Capacitance (Ciss) @ Vds: 88pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | Доп. информация Искать в поставщиках | ||
IRLR014TRR | Vishay/Siliconix | MOSFET N-CH 60V 7.7A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 8.4nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7.7A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRC640PBF | Vishay/Siliconix | MOSFET N-CH 200V 18A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | Доп. информация Искать в поставщиках | ||
IRFR010TRL | Vishay/Siliconix | MOSFET N-CH 50V 8.2A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.2A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFU9010PBF | Vishay/Siliconix | MOSFET P-CH 50V 5.3A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFD010 | Vishay/Siliconix | MOSFET N-CH 50V 1.7A 4-DIP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках | |
IRL3502L | Vishay/Siliconix | MOSFET N-CH 20V 110A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 110nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 4700pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
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