Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRFZ40 — MOSFET N-CH 50V 35A TO-220AB

Производитель	Vishay/Siliconix

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	28 mOhm @ 29A, 10V
Drain to Source Voltage (Vdss)	50V
Gate Charge (Qg) @ Vgs	60nC @ 10V
Current - Continuous Drain (Id) @ 25° C	35A
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	125W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Встречается под наим.	*IRFZ40

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRFR010TRR	Vishay/Siliconix	MOSFET N-CH 50V 8.2A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.2A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF5801	Vishay/Siliconix	MOSFET N-CH 200V 600MA 6-TSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 3.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 600mA · Input Capacitance (Ciss) @ Vds: 88pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP		Доп. информация Искать в поставщиках
	IRLR014TRR	Vishay/Siliconix	MOSFET N-CH 60V 7.7A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 8.4nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7.7A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRC640PBF	Vishay/Siliconix	MOSFET N-CH 200V 18A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFR010TRL	Vishay/Siliconix	MOSFET N-CH 50V 8.2A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.2A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFU9010PBF	Vishay/Siliconix	MOSFET P-CH 50V 5.3A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFD010	Vishay/Siliconix	MOSFET N-CH 50V 1.7A 4-DIP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP	от 0,00	Доп. информация Искать в поставщиках
	IRL3502L	Vishay/Siliconix	MOSFET N-CH 20V 110A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 110nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 4700pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRCZ34PBF	Vishay/Siliconix	MOSFET N-CH 60V 30A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFD020	Vishay/Siliconix	MOSFET N-CH 50V 2.4A 4-DIP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP		Доп. информация Искать в поставщиках
	IRFD010PBF	Vishay/Siliconix	MOSFET N-CH 50V 1.7A 4-DIP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLI620G	Vishay/Siliconix	MOSFET N-CH 200V 4A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.4A, 5V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4A · Input Capacitance (Ciss) @ Vds: 360pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00	Доп. информация Искать в поставщиках
	IRFBG30L	Vishay/Siliconix	MOSFET N-CH 1000V 3.1A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Доп. информация Искать в поставщиках
	IRFIB8N50KPBF	Vishay/Siliconix	MOSFET N-CH 500V 6.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB		Доп. информация Искать в поставщиках
	IRFPC48	Vishay/Siliconix	MOSFET N-CH 600V 8.9A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 820 mOhm @ 5.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.9A · Input Capacitance (Ciss) @ Vds: 1800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLBA3803	Vishay/Siliconix	MOSFET N-CH 30V 179A SUPER-220 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 140nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 179A · Input Capacitance (Ciss) @ Vds: 5000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 270W · Mounting Type: Through Hole · Package / Case: Super-220™	от 0,00	Доп. информация Искать в поставщиках
	IRFP460P	Vishay/Siliconix	MOSFET N-CH 500V 20A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFBC20	Vishay/Siliconix	MOSFET N-CH 600V 2.2A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRFZ34ESTRL	Vishay/Siliconix	MOSFET N-CH 60V 28A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRFZ24L	Vishay/Siliconix	MOSFET N-CH 60V 17A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF9Z20PBF	Vishay/Siliconix	MOSFET P-CH 50V 9.7A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 480pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFR9010	Vishay/Siliconix	MOSFET P-CH 50V 5.3A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF7822TRR	Vishay/Siliconix	MOSFET N-CH 30V 18A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 5500pF @ 16V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF9Z30STRL	Vishay/Siliconix	MOSFET P-CH 50V 18A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRFIBC20G	Vishay/Siliconix	MOSFET N-CH 600V 1.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00	Доп. информация Искать в поставщиках

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