Производитель: Vishay/Siliconix  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V  •  Drain to Source Voltage (Vdss): 500V  •  Gate Charge (Qg) @ Vgs: 89nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 6.7A  •  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 45W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB  •  Встречается под наим.: *IRFIB8N50KPBF