Производитель: Vishay/Siliconix  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V  •  Drain to Source Voltage (Vdss): 50V  •  Gate Charge (Qg) @ Vgs: 9.1nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 5.3A  •  Input Capacitance (Ciss) @ Vds: 240pF @ 25V  •  FET Polarity: P-Channel  •  FET Feature: Standard  •  Power - Max: 25W  •  Mounting Type: Through Hole  •  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)  •  Встречается под наим.: *IRFU9010PBF