Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRL3502L — MOSFET N-CH 20V 110A TO-262

Производитель	Vishay/Siliconix

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	7 mOhm @ 64A, 7V
Drain to Source Voltage (Vdss)	20V
Gate Charge (Qg) @ Vgs	110nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C	110A
Input Capacitance (Ciss) @ Vds	4700pF @ 15V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	140W
Mounting Type	Through Hole
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
Встречается под наим.	*IRL3502L

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRFP354PBF	Vishay/Siliconix	MOSFET N-CH 450V 14A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC		Доп. информация Искать в поставщиках
	IRFBA22N50A	Vishay/Siliconix	MOSFET N-CH 500V 24A SUPER-220 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 3400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 340W · Mounting Type: Through Hole · Package / Case: Super-220™		Доп. информация Искать в поставщиках
	IRC540PBF	Vishay/Siliconix	MOSFET N-CH 100V 28A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFI840GPBF	Vishay/Siliconix	MOSFET N-CH 500V 4.6A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRC634	Vishay/Siliconix	MOSFET N-CH 250V 8.1A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.1A · Input Capacitance (Ciss) @ Vds: 770pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRCZ24	Vishay/Siliconix	MOSFET N-CH 55V 17A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 720pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFZ30PBF	Vishay/Siliconix	MOSFET N-CH 50V 30A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFBA22N50APBF	Vishay/Siliconix	MOSFET N-CH 500V 24A SUPER-220 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 3400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 340W · Mounting Type: Through Hole · Package / Case: Super-220™		Доп. информация Искать в поставщиках
	IRFZ20PBF	Vishay/Siliconix	MOSFET N-CH 50V 15A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A. 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 850pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRL3303D1STRR	Vishay/Siliconix	MOSFET N-CH 30V 38A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 26nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 38A · Input Capacitance (Ciss) @ Vds: 870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFU9010	Vishay/Siliconix	MOSFET P-CH 50V 5.3A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFR010PBF	Vishay/Siliconix	MOSFET N-CH 50V 8.2A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.2A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRC830	Vishay/Siliconix	MOSFET N-CH 500V 4.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 610pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFI710G	Vishay/Siliconix	MOSFET N-CH 400V 1.6A TO220FP Серия: HEXFET® · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 1.6A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00	Доп. информация Искать в поставщиках
	IRFPC30	Vishay/Siliconix	MOSFET N-CH 600V 4.3A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC		Доп. информация Искать в поставщиках
	IRFIB8N50K	Vishay/Siliconix	MOSFET N-CH 500V 6.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB		Доп. информация Искать в поставщиках
	IRC730PBF	Vishay/Siliconix	MOSFET N-CH 400V 5.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRC840PBF	Vishay/Siliconix	MOSFET N-CH 500V 8A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFIB6N60APBF	Vishay/Siliconix	MOSFET N-CH 600V 5.5A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFSL31N20DTRR	Vishay/Siliconix	MOSFET N-CH 200V 31A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 2370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFP360	Vishay/Siliconix	MOSFET N-CH 400V 23A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 4500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00	Доп. информация Искать в поставщиках
	IRFIB5N65APBF	Vishay/Siliconix	MOSFET N-CH 650V 5.1A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 1417pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFI530GPBF	Vishay/Siliconix	MOSFET N-CH 100V 9.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 670pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00	Доп. информация Искать в поставщиках
	IRFZ46L	Vishay/Siliconix	MOSFET N-CH 50V 50A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 24 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFR9010TRPBF	Vishay/Siliconix	MOSFET P-CH 50V 5.3A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках

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