Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 110nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 31A  •  Input Capacitance (Ciss) @ Vds: 2370pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 3.1W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)