Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRFS9N60ATRR — MOSFET N-CH 600V 9.2A D2PAK

Производитель	Vishay/Siliconix

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	750 mOhm @ 5.5A, 10V
Drain to Source Voltage (Vdss)	600V
Gate Charge (Qg) @ Vgs	49nC @ 10V
Current - Continuous Drain (Id) @ 25° C	9.2A
Input Capacitance (Ciss) @ Vds	1400pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	170W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRFIB8N50KPBF	Vishay/Siliconix	MOSFET N-CH 500V 6.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB		Доп. информация Искать в поставщиках
	IRFPC48	Vishay/Siliconix	MOSFET N-CH 600V 8.9A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 820 mOhm @ 5.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.9A · Input Capacitance (Ciss) @ Vds: 1800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLBA3803	Vishay/Siliconix	MOSFET N-CH 30V 179A SUPER-220 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 140nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 179A · Input Capacitance (Ciss) @ Vds: 5000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 270W · Mounting Type: Through Hole · Package / Case: Super-220™	от 0,00	Доп. информация Искать в поставщиках
	IRFP460P	Vishay/Siliconix	MOSFET N-CH 500V 20A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFIB6N60APBF	Vishay/Siliconix	MOSFET N-CH 600V 5.5A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFI710G	Vishay/Siliconix	MOSFET N-CH 400V 1.6A TO220FP Серия: HEXFET® · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 1.6A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00	Доп. информация Искать в поставщиках
	IRC830	Vishay/Siliconix	MOSFET N-CH 500V 4.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 610pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFPC30	Vishay/Siliconix	MOSFET N-CH 600V 4.3A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC		Доп. информация Искать в поставщиках
	IRC730PBF	Vishay/Siliconix	MOSFET N-CH 400V 5.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFIB8N50K	Vishay/Siliconix	MOSFET N-CH 500V 6.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB		Доп. информация Искать в поставщиках
	IRC840PBF	Vishay/Siliconix	MOSFET N-CH 500V 8A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFSL31N20DTRR	Vishay/Siliconix	MOSFET N-CH 200V 31A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 2370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFP360	Vishay/Siliconix	MOSFET N-CH 400V 23A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 4500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00	Доп. информация Искать в поставщиках
	IRFZ44RSTRR	Vishay/Siliconix	MOSFET N-CH 60V 50A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF3205ZSTRL	Vishay/Siliconix	MOSFET N-CH 55V 75A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7822TRR	Vishay/Siliconix	MOSFET N-CH 30V 18A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 5500pF @ 16V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF9Z30STRL	Vishay/Siliconix	MOSFET P-CH 50V 18A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRFIBC20G	Vishay/Siliconix	MOSFET N-CH 600V 1.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	от 0,00	Доп. информация Искать в поставщиках
	IRL3102L	Vishay/Siliconix	MOSFET N-CH 20V 61A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 58nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 61A · Input Capacitance (Ciss) @ Vds: 2500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 89W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF2807ZSTRL	Vishay/Siliconix	MOSFET N-CH 75V 75A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3270pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFIB7N50LPBF	Vishay/Siliconix	MOSFET N-CH 500V 6.8A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 92nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 2220pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 46W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB		Доп. информация Искать в поставщиках
	IRC530PBF	Vishay/Siliconix	MOSFET N-CH 100V 14A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFB9N30A	Vishay/Siliconix	MOSFET N-CH 300V 9.3A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFR2605TRR	Vishay/Siliconix	MOSFET N-CH 55V 19A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IRFZ34EL	Vishay/Siliconix	MOSFET N-CH 60V 28A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Доп. информация Искать в поставщиках

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