IRL530L — MOSFET N-CH 100V 13A TO-262
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | IRFBC20 | Vishay/Siliconix | MOSFET N-CH 600V 2.2A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFZ34ESTRL | Vishay/Siliconix | MOSFET N-CH 60V 28A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IRFZ24L | Vishay/Siliconix | MOSFET N-CH 60V 17A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF9Z20PBF | Vishay/Siliconix | MOSFET P-CH 50V 9.7A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 480pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFZ40 | Vishay/Siliconix | MOSFET N-CH 50V 35A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFR9010 | Vishay/Siliconix | MOSFET P-CH 50V 5.3A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRF7822TRR | Vishay/Siliconix | MOSFET N-CH 30V 18A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 5500pF @ 16V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF9Z30STRL | Vishay/Siliconix | MOSFET P-CH 50V 18A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRFIBC20G | Vishay/Siliconix | MOSFET N-CH 600V 1.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
| IRL3102L | Vishay/Siliconix | MOSFET N-CH 20V 61A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 58nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 61A · Input Capacitance (Ciss) @ Vds: 2500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 89W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF2807ZSTRL | Vishay/Siliconix | MOSFET N-CH 75V 75A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3270pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFIB7N50LPBF | Vishay/Siliconix | MOSFET N-CH 500V 6.8A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 92nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 2220pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 46W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | Доп. информация Искать в поставщиках | |
| IRC530PBF | Vishay/Siliconix | MOSFET N-CH 100V 14A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | Доп. информация Искать в поставщиках | ||
| IRFB9N30A | Vishay/Siliconix | MOSFET N-CH 300V 9.3A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
| IRFR2605TRR | Vishay/Siliconix | MOSFET N-CH 55V 19A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
| IRFZ34EL | Vishay/Siliconix | MOSFET N-CH 60V 28A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
| IRFZ24 | Vishay/Siliconix | MOSFET N-CH 60V 17A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF1405ZTRR | Vishay/Siliconix | MOSFET N-CH 55V 75A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 4780pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 230W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRL3302L | Vishay/Siliconix | MOSFET N-CH 20V 39A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 31nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 39A · Input Capacitance (Ciss) @ Vds: 1300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 57W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFR9010TR | Vishay/Siliconix | MOSFET P-CH 50V 5.3A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRC740 | Vishay/Siliconix | MOSFET N-CH 400V 10A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRL2203S | Vishay/Siliconix | MOSFET N-CH 30V 100A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 110nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 3500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IRLR024TRR | Vishay/Siliconix | MOSFET N-CH 60V 14A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 18nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFU4105ZTR | Vishay/Siliconix | MOSFET N-CH 55V 30A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 740pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 48W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF9Z30PBF | Vishay/Siliconix | MOSFET P-CH 50V 18A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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