Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 180nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 75A  •  Input Capacitance (Ciss) @ Vds: 4780pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 230W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 (Straight Leads)