Войти Регистрация |
|
Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
BS170RLRA | ON Semiconductor | MOSFET N-CH 60V 500MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 60pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 350mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Доп. информация Искать в поставщиках | ||
MTB30P06VT4 | ON Semiconductor | MOSFET P-CH 60V 30A D2PAK Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2190pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
2N7002WT3G | ON Semiconductor | MOSFET N-CH SINGLE 60V SOT-323 Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 310mA · Input Capacitance (Ciss) @ Vds: 24.5pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 280mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | Доп. информация Искать в поставщиках | ||
NTD3817NT4G | ON Semiconductor | MOSFET N-CH 16V 7.6A DPAK Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 16V · Gate Charge (Qg) @ Vgs: 10.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.6A · Input Capacitance (Ciss) @ Vds: 702pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.2W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
NTP27N06L | ON Semiconductor | MOSFET N-CH 60V 27A TO220AB Rds On (Max) @ Id, Vgs: 48 mOhm @ 13.5A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 990pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88.2W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
NTB90N02G | ON Semiconductor | MOSFET N-CH 24V 90A D2PAK Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 24V · Gate Charge (Qg) @ Vgs: 29nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 2120pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 85W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
NTB18N06T4 | ON Semiconductor | MOSFET N-CH 60V 15A D2PAK Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 48.4W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
MTP12P10G | ON Semiconductor | MOSFET P-CH 100V 12A TO220AB Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
MTB23P06VT4 | ON Semiconductor | MOSFET P-CH 60V 23A D2PAK Rds On (Max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 1620pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
NTMFS4708NT3G | ON Semiconductor | MOSFET N-CH 11.5A 30V SO8 FL Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.8A · Input Capacitance (Ciss) @ Vds: 970pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 6-DFN, SO8 FL | Доп. информация Искать в поставщиках | ||
NTMS4937NR2G | ON Semiconductor | MOSFET N-CH 30V 112A SGL 8SOIC | от 0,00 | Доп. информация Искать в поставщиках | |
NTD12N10G | ON Semiconductor | MOSFET N-CH 100V 12A DPAK Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.28W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTD110N02R | ON Semiconductor | MOSFET N-CH 24V 12.5A DPAK Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 24V · Gate Charge (Qg) @ Vgs: 28nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12.5A · Input Capacitance (Ciss) @ Vds: 3440pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
NTF6P02T3G | ON Semiconductor | MOSFET P-CH 20V 10A SOT223 Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1200pF @ 16V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 8.3W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTD4904N-1G | ON Semiconductor | MOSFET N-CH 30V 79A SGL DPAK-3 | от 0,00 | Доп. информация Искать в поставщиках | |
MGSF1N02ELT1 | ON Semiconductor | MOSFET N-CH 20V 750MA SOT-23 Rds On (Max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 750mA · Input Capacitance (Ciss) @ Vds: 160pF @ 5V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | Доп. информация Искать в поставщиках | ||
NTMSD3P102R2SG | ON Semiconductor | MOSFET P-CH 20V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
NTD32N06 | ON Semiconductor | MOSFET N-CH 60V 32A DPAK Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 32A · Input Capacitance (Ciss) @ Vds: 1725pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
NTMS4176PR2G | ON Semiconductor | MOSFET P-CH 30V 5.5A 8-SOIC Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1720pF @ 24V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 810mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
NTD3055-150T4 | ON Semiconductor | MOSFET N-CH 60V 9A DPAK Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 280pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
NTD32N06T4G | ON Semiconductor | MOSFET N-CH 60V 32A DPAK Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 32A · Input Capacitance (Ciss) @ Vds: 1725pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
MMBF2201NT1 | ON Semiconductor | MOSFET N-CH 20V 300MA SOT-323 Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 45pF @ 5V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 | Доп. информация Искать в поставщиках | |
NTB45N06G | ON Semiconductor | MOSFET N-CH 60V 45A D2PAK Rds On (Max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1725pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.4W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTMFS4121NT1G | ON Semiconductor | MOSFET N-CHAN 17A 30V 8-SOIC FL Rds On (Max) @ Id, Vgs: 5.25 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 2700pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: 5-DFN, SO8 FL | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
MGSF1N03LT1 | ON Semiconductor | MOSFET N-CH 30V 1.6A SOT-23 Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 140pF @ 5V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 420mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 | Доп. информация Искать в поставщиках |
© 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |