Войти    Регистрация
ChipFind каталог подбора компонентов
Например: transistor, max232, lt319a
 

Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

NTD4904N-1G — MOSFET N-CH 30V 79A SGL DPAK-3

ПроизводительON Semiconductor
Вредные веществаRoHS   Без свинца
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
NTD4855N-1GON SemiconductorMOSFET N-CH 25V 14A IPAK
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 32.7nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2950pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.35W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
от 0,00Доп. информация
Искать в поставщиках
MTP20N15EMTP20N15EON SemiconductorMOSFET N-CH 150V 20A TO-220AB
Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 55.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1627pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 112W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
Доп. информация
Искать в поставщиках
NTQS6463R2ON SemiconductorMOSFET P-CH 20V 6.8A 8-TSSOP
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.8A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.39W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSSOP
Доп. информация
Искать в поставщиках
NTB22N06T4ON SemiconductorMOSFET N-CH 60V 22A D2PAK-3
Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (3 leads + tab)
Доп. информация
Искать в поставщиках
NTA4151PT1GNTA4151PT1GON SemiconductorMOSFET P-CH 20V 760MA SOT-416
Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.1nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 760mA  ·  Input Capacitance (Ciss) @ Vds: 156pF @ 5V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 301mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTMFS4851NT1GON SemiconductorMOSFET N-CH 30V 9.5A SO-8FL
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 1850pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 870mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-DFN, SO8 FL
от 0,00Доп. информация
Искать в поставщиках
NTLJF3118NTAGON SemiconductorMOSFET N-CH 20V 2.6A 6-WDFN
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 3.7nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.6A  ·  Input Capacitance (Ciss) @ Vds: 271pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-WDFN
Доп. информация
Искать в поставщиках
NTD85N02RT4ON SemiconductorMOSFET N-CH 24V 12A IPAK
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 24V  ·  Gate Charge (Qg) @ Vgs: 17.7nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2050pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
Доп. информация
Искать в поставщиках
NTP75N03-006NTP75N03-006ON SemiconductorMOSFET N-CH 30V 75A TO220AB
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5635pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
Доп. информация
Искать в поставщиках
NTD25P03L1NTD25P03L1ON SemiconductorMOSFET P-CH 30V 25A TO-251A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1260pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
Доп. информация
Искать в поставщиках
NTF3055-100T1GNTF3055-100T1GON SemiconductorMOSFET N-CH 60V 3A SOT223
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 455pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTD4909N-1GON SemiconductorMOSFET N-CH 30V 41A SGL DPAK-3от 0,00Доп. информация
Искать в поставщиках
NTD4808N-1GON SemiconductorMOSFET N-CH 30V 9.8A IPAK
Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.8A  ·  Input Capacitance (Ciss) @ Vds: 1538pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
от 0,00Доп. информация
Искать в поставщиках
NTF3055L175T3GNTF3055L175T3GON SemiconductorMOSFET N-CH 60V 2A SOT223
Rds On (Max) @ Id, Vgs: 175 mOhm @ 1A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 270pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Доп. информация
Искать в поставщиках
NTD4809NA-1GON SemiconductorMOSFET N-CH 30V 9A IPAK
Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 1456pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
от 0,00Доп. информация
Искать в поставщиках
NTD4856N-1GON SemiconductorMOSFET N-CH 25V 13.3A IPAK
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 13.3A  ·  Input Capacitance (Ciss) @ Vds: 2241pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.33W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
от 0,00Доп. информация
Искать в поставщиках
NTGS1135PT1GON SemiconductorMOSFET P-CH 8V 4.6A 6-TSOP
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 2200pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 970mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
от 0,00Доп. информация
Искать в поставщиках
MMFT2N02ELT1MMFT2N02ELT1ON SemiconductorMOSFET N-CH 20V 1.6A SOT223
Rds On (Max) @ Id, Vgs: 150 mOhm @ 800mA, 5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  Input Capacitance (Ciss) @ Vds: 580pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 800mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Доп. информация
Искать в поставщиках
NTMFS4835NT1GON SemiconductorMOSFET N-CH 30V 12A SO-8FL
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 3100pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 890mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 5-DFN, SO8 FL
от 0,00Доп. информация
Искать в поставщиках
2N7002ET1G2N7002ET1GON SemiconductorMOSFET N-CH 60V 260MA SOT-23
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.81nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTD20N06LT4NTD20N06LT4ON SemiconductorMOSFET N-CH 60V 20A DPAK
Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 990pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.36W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
Доп. информация
Искать в поставщиках
NTD4857NT4GON SemiconductorMOSFET N-CH 25V 12A DPAK
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1960pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.31W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
от 0,00Доп. информация
Искать в поставщиках
NTJS3157NT2GNTJS3157NT2GON SemiconductorMOSFET N-CH 20V 3.2A SOT-363
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
Доп. информация
Искать в поставщиках
NIF9N05CLT1NIF9N05CLT1ON SemiconductorMOSFET N-CH 52V 2.6A SOT223
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 52V  ·  Gate Charge (Qg) @ Vgs: 7nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.6A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 35V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.69W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Доп. информация
Искать в поставщиках
NTMFS4935NT3GON SemiconductorMOSFET N-CH 30V 93A SGL SO-8FLот 0,00Доп. информация
Искать в поставщиках

Поискать «NTD4904N-1G» в:  Google   Яндекс   eFind   eInfo Сообщить об ошибке  


© 2006 — 2024 Капитал Плюс
Телефон, e-mail, ICQ для связи
Каталог с параметрами на 1.401.534 компонентов РегистрацияРеклама на сайте