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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
NTD4855N-1G | ON Semiconductor | MOSFET N-CH 25V 14A IPAK Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 32.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 2950pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.35W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
MTP20N15E | ON Semiconductor | MOSFET N-CH 150V 20A TO-220AB Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 55.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1627pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 112W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
NTQS6463R2 | ON Semiconductor | MOSFET P-CH 20V 6.8A 8-TSSOP Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.8A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.39W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | Доп. информация Искать в поставщиках | ||
NTB22N06T4 | ON Semiconductor | MOSFET N-CH 60V 22A D2PAK-3 Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (3 leads + tab) | Доп. информация Искать в поставщиках | ||
NTA4151PT1G | ON Semiconductor | MOSFET P-CH 20V 760MA SOT-416 Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 2.1nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 760mA · Input Capacitance (Ciss) @ Vds: 156pF @ 5V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 301mW · Mounting Type: Surface Mount · Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTMFS4851NT1G | ON Semiconductor | MOSFET N-CH 30V 9.5A SO-8FL Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.5A · Input Capacitance (Ciss) @ Vds: 1850pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 870mW · Mounting Type: Surface Mount · Package / Case: 6-DFN, SO8 FL | от 0,00 | Доп. информация Искать в поставщиках | |
NTLJF3118NTAG | ON Semiconductor | MOSFET N-CH 20V 2.6A 6-WDFN Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 3.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.6A · Input Capacitance (Ciss) @ Vds: 271pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 6-WDFN | Доп. информация Искать в поставщиках | ||
NTD85N02RT4 | ON Semiconductor | MOSFET N-CH 24V 12A IPAK Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 24V · Gate Charge (Qg) @ Vgs: 17.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2050pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
NTP75N03-006 | ON Semiconductor | MOSFET N-CH 30V 75A TO220AB Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 75nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5635pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
NTD25P03L1 | ON Semiconductor | MOSFET P-CH 30V 25A TO-251A Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1260pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 75W · Mounting Type: Surface Mount · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
NTF3055-100T1G | ON Semiconductor | MOSFET N-CH 60V 3A SOT223 Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 455pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTD4909N-1G | ON Semiconductor | MOSFET N-CH 30V 41A SGL DPAK-3 | от 0,00 | Доп. информация Искать в поставщиках | |
NTD4808N-1G | ON Semiconductor | MOSFET N-CH 30V 9.8A IPAK Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.8A · Input Capacitance (Ciss) @ Vds: 1538pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
NTF3055L175T3G | ON Semiconductor | MOSFET N-CH 60V 2A SOT223 Rds On (Max) @ Id, Vgs: 175 mOhm @ 1A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 10nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 270pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Доп. информация Искать в поставщиках | ||
NTD4809NA-1G | ON Semiconductor | MOSFET N-CH 30V 9A IPAK Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 1456pF @ 12V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
NTD4856N-1G | ON Semiconductor | MOSFET N-CH 25V 13.3A IPAK Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 27nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13.3A · Input Capacitance (Ciss) @ Vds: 2241pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.33W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
NTGS1135PT1G | ON Semiconductor | MOSFET P-CH 8V 4.6A 6-TSOP Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 21nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.6A · Input Capacitance (Ciss) @ Vds: 2200pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 970mW · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 | Доп. информация Искать в поставщиках | |
MMFT2N02ELT1 | ON Semiconductor | MOSFET N-CH 20V 1.6A SOT223 Rds On (Max) @ Id, Vgs: 150 mOhm @ 800mA, 5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 580pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 800mW · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Доп. информация Искать в поставщиках | ||
NTMFS4835NT1G | ON Semiconductor | MOSFET N-CH 30V 12A SO-8FL Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 39nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 3100pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 890mW · Mounting Type: Surface Mount · Package / Case: 5-DFN, SO8 FL | от 0,00 | Доп. информация Искать в поставщиках | |
2N7002ET1G | ON Semiconductor | MOSFET N-CH 60V 260MA SOT-23 Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.81nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTD20N06LT4 | ON Semiconductor | MOSFET N-CH 60V 20A DPAK Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 990pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.36W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
NTD4857NT4G | ON Semiconductor | MOSFET N-CH 25V 12A DPAK Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 24nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1960pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.31W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
NTJS3157NT2G | ON Semiconductor | MOSFET N-CH 20V 3.2A SOT-363 Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 500pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | Доп. информация Искать в поставщиках | ||
NIF9N05CLT1 | ON Semiconductor | MOSFET N-CH 52V 2.6A SOT223 Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 52V · Gate Charge (Qg) @ Vgs: 7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.6A · Input Capacitance (Ciss) @ Vds: 250pF @ 35V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.69W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Доп. информация Искать в поставщиках | ||
NTMFS4935NT3G | ON Semiconductor | MOSFET N-CH 30V 93A SGL SO-8FL | от 0,00 | Доп. информация Искать в поставщиках |
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