Войти Регистрация |
|
Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
NTD20P06LT4G | ON Semiconductor | MOSFET P-CH 60V 15.5A DPAK Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 26nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 15.5A · Input Capacitance (Ciss) @ Vds: 1190pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
MMBF0202PLT1 | ON Semiconductor | MOSFET P-CH 20V 300MA SOT-23 Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 2.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 50pF @ 5V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 225mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | Доп. информация Искать в поставщиках | ||
NTMFS4744NT3G | ON Semiconductor | MOSFET N-CH 30V 7A SO-8FL Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1300pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 880mW · Mounting Type: Surface Mount · Package / Case: 5-DFN, SO8 FL | от 0,00 | Доп. информация Искать в поставщиках | |
NTD60N02R-1G | ON Semiconductor | MOSFET N-CH 25V 8.5A IPAK Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.5A · Input Capacitance (Ciss) @ Vds: 1330pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTF3055-100T1 | ON Semiconductor | MOSFET N-CH 60V 3A SOT223 Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 455pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Доп. информация Искать в поставщиках | ||
NTR4003NT3G | ON Semiconductor | MOSFET N-CH 30V 500MA SOT-23 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 1.15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 21pF @ 5V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 690mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTE4151PT1G | ON Semiconductor | MOSFET P-CH 20V 760MA SC-89 Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 2.1nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 760mA · Input Capacitance (Ciss) @ Vds: 156pF @ 5V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 313mW · Mounting Type: Surface Mount · Package / Case: SC-89-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BS170RLRPG | ON Semiconductor | MOSFET N-CH 60V 500MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 60pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 350mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Доп. информация Искать в поставщиках | ||
NTGS4141NT1 | ON Semiconductor | MOSFET N-CH 30V 3.5A 6-TSOP Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 560pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 | Доп. информация Искать в поставщиках | |
NTD5805NT4G | ON Semiconductor | MOSFET N-CH 40V 51A DPAK Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 51A · Input Capacitance (Ciss) @ Vds: 1725pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTB35N15T4G | ON Semiconductor | MOSFET N-CH 150V 37A D2PAK Rds On (Max) @ Id, Vgs: 50 mOhm @ 18.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 3200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTA4001NT1G | ON Semiconductor | MOSFET N-CH 20V 238MA SOT-416 Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 238mA · Input Capacitance (Ciss) @ Vds: 20pF @ 5V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTR4503NT3 | ON Semiconductor | MOSFET N-CH 30V 1.5A SOT-23 Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 250pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 420mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | Доп. информация Искать в поставщиках | ||
MTP2955V | ON Semiconductor | MOSFET P-CH 60V 12A TO-220AB Rds On (Max) @ Id, Vgs: 230 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 770pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
NTMFS4846NT1G | ON Semiconductor | MOSFET N-CH 30V 12.7A SO-8FL Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 32nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12.7A · Input Capacitance (Ciss) @ Vds: 3250pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 890mW · Mounting Type: Surface Mount · Package / Case: 6-DFN, SO8 FL | от 0,00 | Доп. информация Искать в поставщиках | |
NTGS3455T1G | ON Semiconductor | MOSFET P-CH 30V 2.5A 6-TSOP Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 480pF @ 5V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTD24N06-1G | ON Semiconductor | MOSFET N-CH 60V 24A IPAK Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.36W · Mounting Type: Surface Mount · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
NTB125N02RT4G | ON Semiconductor | MOSFET N-CH 24V 15.9A D2PAK Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 24V · Gate Charge (Qg) @ Vgs: 28nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 15.9A · Input Capacitance (Ciss) @ Vds: 3440pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.98W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
NTP4302 | ON Semiconductor | MOSFET N-CH 30V 74A TO220AB Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 37A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 28nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 74A · Input Capacitance (Ciss) @ Vds: 2400pF @ 24V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
MMSF3P02HDR2 | ON Semiconductor | MOSFET P-CH 20V 5.6A 8-SOIC Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · Input Capacitance (Ciss) @ Vds: 1400pF @ 16V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
2N7002KT1G | ON Semiconductor | MOSFET N-CH 60V 320MA SOT-23 Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 320mA · Input Capacitance (Ciss) @ Vds: 24.5pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTMS4939NR2G | ON Semiconductor | MOSFET N-CH 30V 100A SGL 8SOIC | от 0,00 | Доп. информация Искать в поставщиках | |
MMBF170LT1G | ON Semiconductor | MOSFET N-CH 60V 500MA SOT-23 Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 60pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 225mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTD40N03R-001 | ON Semiconductor | MOSFET N-CH 25V 45A DPAK Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 5.78nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.8A · Input Capacitance (Ciss) @ Vds: 584pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
NTD85N02RG | ON Semiconductor | MOSFET N-CH 24V 12A DPAK Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 24V · Gate Charge (Qg) @ Vgs: 17.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2050pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках |
© 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |