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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
NTD12N10G

- Габаритный чертеж

NTD12N10G — MOSFET N-CH 100V 12A DPAK

ПроизводительON Semiconductor
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs165 mOhm @ 6A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs20nC @ 10V
Current - Continuous Drain (Id) @ 25° C12A
Input Capacitance (Ciss) @ Vds550pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max1.28W
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Встречается под наим.NTD12N10G-ND, NTD12N10GOS
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Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 225mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 5.78nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.8A  ·  Input Capacitance (Ciss) @ Vds: 584pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTD85N02RGNTD85N02RGON SemiconductorMOSFET N-CH 24V 12A DPAK
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 24V  ·  Gate Charge (Qg) @ Vgs: 17.7nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2050pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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