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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
NTR4003NT3G

- Габаритный чертеж

NTR4003NT3G — MOSFET N-CH 30V 500MA SOT-23

ПроизводительON Semiconductor
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs1.5 Ohm @ 10mA, 4V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs1.15nC @ 5V
Current - Continuous Drain (Id) @ 25° C500mA
Input Capacitance (Ciss) @ Vds21pF @ 5V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max690mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Встречается под наим.NTR4003NT3GOSDKR
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ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
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Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.4W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 420mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.4A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 16V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 780mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
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Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 49.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 15.7A  ·  Input Capacitance (Ciss) @ Vds: 4600pf @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.43W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTGS3441T1GNTGS3441T1GON SemiconductorMOSFET P-CH 20V 1.65A 6-TSOP
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.65A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 5V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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Rds On (Max) @ Id, Vgs: 46 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 1015pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88.2W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 1.8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 115pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.04W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTGS3441BT1GON SemiconductorMOSFET P-CH 20V 2.2A 6-TSOP
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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Rds On (Max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 64.7W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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NTB60N06T4GON SemiconductorMOSFET N-CH 60V 60A D2PAK
Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 81nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 3220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 6.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 640pF @ 8V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 290mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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NTMS4404NR2NTMS4404NR2ON SemiconductorMOSFET N-CH 30V 7A 8-SOIC
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTHD5904NT3ON SemiconductorMOSFET N-CH 20V 2.5A CHIPFET
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 465pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 640mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-ChipFET™
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