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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
NTP13N10G

NTP13N10G — MOSFET N-CH 100V 13A TO220AB

ПроизводительON Semiconductor
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs165 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs20nC @ 10V
Current - Continuous Drain (Id) @ 25° C13A
Input Capacitance (Ciss) @ Vds550pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max64.7W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Встречается под наим.NTP13N10GOS
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NTD3055L104NTD3055L104ON SemiconductorMOSFET N-CH 60V 12A DPAK
Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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MMFT5P03HDT1MMFT5P03HDT1ON SemiconductorMOSFET P-CH 30V 3.7A SOT223
Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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NTD4858NA-1GON SemiconductorMOSFET N-CH 25V 11.2A IPAK
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 19.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.2A  ·  Input Capacitance (Ciss) @ Vds: 1563pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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NTP85N03RGNTP85N03RGON SemiconductorMOSFET N-CH 28V 85A TO220AB
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 28V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 85A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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NTD50N03R-001ON SemiconductorMOSFET N-CH 25V 7.8A IPAK
Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 11.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.8A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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MMFT2955ET1MMFT2955ET1ON SemiconductorMOSFET P-CH 60V 1.2A SOT223
Rds On (Max) @ Id, Vgs: 300 mOhm @ 600mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.2A  ·  Input Capacitance (Ciss) @ Vds: 460pF @ 20V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 800mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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Rds On (Max) @ Id, Vgs: 42 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88.2W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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MTP36N06VMTP36N06VON SemiconductorMOSFET N-CH 60V 32A TO-220AB
Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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NTMFS4845NT1GON SemiconductorMOSFET N-CH 30V 13.7A SO-8FL
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 13.7A  ·  Input Capacitance (Ciss) @ Vds: 3720pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 890mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-DFN, SO8 FL
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