Войти    Регистрация
ChipFind каталог подбора компонентов
Например: transistor, max232, lt319a
  

Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
BUK954R2-55B,127

BUK954R2-55B,127 — MOSFET N-CH 55V 75A TO220AB

ПроизводительNXP Semiconductors
Вредные веществаRoHS   Без свинца
СерияTrenchMOS™
Rds On (Max) @ Id, Vgs3.7 mOhm @ 25A, 10V
Drain to Source Voltage (Vdss)55V
Gate Charge (Qg) @ Vgs95nC @ 5V
Current - Continuous Drain (Id) @ 25° C75A
Input Capacitance (Ciss) @ Vds10220pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-220AB-3
Встречается под наим.BUK954R2-55B, BUK954R2-55B-ND
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
BSH111,215BSH111,215NXP SemiconductorsMOSFET N-CH 55V 335MA SOT-23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 1nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 335mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 0,00
от 0,00		Доп. информация
Искать в поставщиках
PHP225NQ04T,127PHP225NQ04T,127NXP SemiconductorsMOSFET N-CH 40V 75A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
Доп. информация
Искать в поставщиках
BUK9509-75A,127BUK9509-75A,127NXP SemiconductorsMOSFET N-CH 75V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 8840pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
от 0,00Доп. информация
Искать в поставщиках
BUK9240-100A,118BUK9240-100A,118NXP SemiconductorsMOSFET N-CH 100V 33A DPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 3072pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 114W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
от 0,00Доп. информация
Искать в поставщиках
BUK7908-40AIE,127NXP SemiconductorsMOSFET N-CH 40V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 221W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
от 0,00Доп. информация
Искать в поставщиках
SI2304DS,215SI2304DS,215NXP SemiconductorsMOSFET N-CH 30V 1.7A SOT23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 195pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 0,00Доп. информация
Искать в поставщиках
PMN45EN,165PMN45EN,165NXP SemiconductorsMOSFET N-CH 30V 5.2A SOT457
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 495pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
от 0,00Доп. информация
Искать в поставщиках
BUK9219-55A,118BUK9219-55A,118NXP SemiconductorsMOSFET N-CH 55V 55A DPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 2920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 114W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
от 0,00Доп. информация
Искать в поставщиках
BUK725R0-40C,118NXP SemiconductorsMOSFET N-CH TRENCH 40V SOT-428
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3820pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 157W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
от 0,00Доп. информация
Искать в поставщиках
PSMN006-20K,518PSMN006-20K,518NXP SemiconductorsMOSFET N-CH 20V 32A 8-SOIC
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 2.5V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 8.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
от 0,00Доп. информация
Искать в поставщиках
PSMN030-150B,118PSMN030-150B,118NXP SemiconductorsMOSFET N-CH 150V 55.5A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 98nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55.5A  ·  Input Capacitance (Ciss) @ Vds: 3680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
от 0,00Доп. информация
Искать в поставщиках
PHK5NQ15T,518PHK5NQ15T,518NXP SemiconductorsMOSFET N-CH 150V 5A SOT96-1
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 6.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
от 0,00Доп. информация
Искать в поставщиках
BUK7526-100B,127BUK7526-100B,127NXP SemiconductorsMOSFET N-CH 100V 49A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 2891pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 157W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
от 0,00Доп. информация
Искать в поставщиках
PHM25NQ10T,518NXP SemiconductorsMOSFET N-CH 100V 30.7A SOT685-1
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 26.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30.7A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-HVSON
Доп. информация
Искать в поставщиках
BUK9608-55A,118BUK9608-55A,118NXP SemiconductorsMOSFET N-CH 55V 75A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6021pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 253W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
от 0,00Доп. информация
Искать в поставщиках
IRFZ24N,127IRFZ24N,127NXP SemiconductorsMOSFET N-CH 55V 17A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
Доп. информация
Искать в поставщиках
BUK9832-55A,115BUK9832-55A,115NXP SemiconductorsMOSFET N-CH 55V 12A SOT223
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 29 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1594pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
от 0,00Доп. информация
Искать в поставщиках
BUK753R4-30B,127NXP SemiconductorsMOSFET N-CH TRENCH 30V TO-220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4951pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 255W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
от 0,00Доп. информация
Искать в поставщиках
PHB95NQ04LT,118PHB95NQ04LT,118NXP SemiconductorsMOSFET N-CH 40V 75A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 32.7nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 157W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Доп. информация
Искать в поставщиках
BSH108,215BSH108,215NXP SemiconductorsMOSFET N-CH 30V 1.9A SOT23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.9A  ·  Input Capacitance (Ciss) @ Vds: 190pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 0,00Доп. информация
Искать в поставщиках
PHD9NQ20T,118PHD9NQ20T,118NXP SemiconductorsMOSFET N-CH 200V 8.7A SOT428
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.7A  ·  Input Capacitance (Ciss) @ Vds: 959pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
от 0,00Доп. информация
Искать в поставщиках
BUK7880-55A,115NXP SemiconductorsMOSFET N-CH TRENCH 55V SOT-223
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
от 0,00Доп. информация
Искать в поставщиках
BUK9508-55A,127BUK9508-55A,127NXP SemiconductorsMOSFET N-CH 55V 75A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6021pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 253W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
Доп. информация
Искать в поставщиках
BUK9907-55ATE,127NXP SemiconductorsMOSFET N-CH 55V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 108nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5836pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 272W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
от 0,00Доп. информация
Искать в поставщиках
BUK9E08-55B,127NXP SemiconductorsMOSFET N-CH TRENCH 55V I2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 203W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
от 0,00Доп. информация
Искать в поставщиках

Поискать «BUK954R2-55B,127» в:  Google   Яндекс   eFind   eInfo Сообщить об ошибке  

© 2006 — 2024 Капитал Плюс
Телефон, e-mail, ICQ для связи		 Каталог с параметрами на 1.401.534 компонентов Регистрация • Реклама на сайте