Производитель: NXP Semiconductors  •  Вредные вещества: RoHS   Без свинца  •  Серия: TrenchMOS™  •  Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 45nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 75A  •  Input Capacitance (Ciss) @ Vds: 5280pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 203W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-220AB (3 straight leads + tab)