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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
BSH111,215

- Габаритный чертеж

BSH111,215 — MOSFET N-CH 55V 335MA SOT-23

ПроизводительNXP Semiconductors
Вредные веществаRoHS   Без свинца
СерияTrenchMOS™
Rds On (Max) @ Id, Vgs4 Ohm @ 500mA, 4.5V
Drain to Source Voltage (Vdss)55V
Gate Charge (Qg) @ Vgs1nC @ 8V
Current - Continuous Drain (Id) @ 25° C335mA
Input Capacitance (Ciss) @ Vds40pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max830mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Встречается под наим.568-1657-1
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Current - Continuous Drain (Id) @ 25° C: 53A  ·  Input Capacitance (Ciss) @ Vds: 3120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 138W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 121nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 272W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 166W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 21 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 8600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PHP32N06LT,127PHP32N06LT,127NXP SemiconductorsMOSFET N-CH 60V 34A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 1280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 97W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PMZ250UN,315NXP SemiconductorsMOSFET N-CH 20V 2.28A SOT883
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.89nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.28A  ·  Input Capacitance (Ciss) @ Vds: 45pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-101, SOT-883
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