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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
IRFBC40

IRFBC40 — MOSFET N-CH 600V 6.2A TO-220AB

ПроизводительVishay/Siliconix
Rds On (Max) @ Id, Vgs1.2 Ohm @ 3.7A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs60nC @ 10V
Current - Continuous Drain (Id) @ 25° C6.2A
Input Capacitance (Ciss) @ Vds1300pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Встречается под наим.*IRFBC40
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
IRFR110IRFR110Vishay/SiliconixMOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRL620SPBFIRL620SPBFVishay/SiliconixMOSFET N-CH 200V 5.2A D2PAK
Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI4874BDY-T1-E3SI4874BDY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 12A 8-SOIC
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 3230pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFR420TRPBFIRFR420TRPBFVishay/SiliconixMOSFET N-CH 500V 2.4A DPAK
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.4A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF740IRF740Vishay/SiliconixMOSFET N-CH 400V 10A TO-220AB
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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SI1058X-T1-E3SI1058X-T1-E3Vishay/SiliconixMOSFET N-CH 20V 1.3A SOT563F
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 5.9nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
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IRF9Z14STRLIRF9Z14STRLVishay/SiliconixMOSFET P-CH 60V 6.7A D2PAK
Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 270pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRC830IRC830Vishay/SiliconixMOSFET N-CH 500V 4.5A TO-220-5
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 610pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFRC20TRLPBFVishay/SiliconixMOSFET N-CH 600V 2A DPAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFU1N60APBFIRFU1N60APBFVishay/SiliconixMOSFET N-CH 600V 1.4A I-PAK
Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 229pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 36W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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SI1067X-T1-GE3Vishay/SiliconixMOSFET P-CH 20V 1.06A SC89-6
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 9.3nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.06A  ·  Input Capacitance (Ciss) @ Vds: 375pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
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SI3469DV-T1-E3SI3469DV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 5A 6-TSOP
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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IRFI710GIRFI710GVishay/SiliconixMOSFET N-CH 400V 1.6A TO220FP
Серия: HEXFET®  ·  Drain to Source Voltage (Vdss): 400V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRF9Z34STRLPBFIRF9Z34STRLPBFVishay/SiliconixMOSFET P-CH 60V 18A D2PAK
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFI634GIRFI634GVishay/SiliconixMOSFET N-CH 250V 5.6A TO220FP
Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRF9Z34PBFIRF9Z34PBFVishay/SiliconixMOSFET P-CH 60V 18A TO-220AB
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 88W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFD9110IRFD9110Vishay/SiliconixMOSFET P-CH 100V 700MA 4-DIP
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 420mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 700mA  ·  Input Capacitance (Ciss) @ Vds: 200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRFIBC20GPBFIRFIBC20GPBFVishay/SiliconixMOSFET N-CH 600V 1.7A TO220FP
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFBC40STRLIRFBC40STRLVishay/SiliconixMOSFET N-CH 600V 6.2A D2PAK
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.2A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFP054PBFIRFP054PBFVishay/SiliconixMOSFET N-CH 60V 70A TO-247AC
Rds On (Max) @ Id, Vgs: 14 mOhm @ 54A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFU014Vishay/SiliconixMOSFET N-CH 60V 7.7A I-PAK
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRFPC30IRFPC30Vishay/SiliconixMOSFET N-CH 600V 4.3A TO-247AC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFR9110TRVishay/SiliconixMOSFET P-CH 100V 3.1A DPAK
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SI4466DY-T1-E3SI4466DY-T1-E3Vishay/SiliconixMOSFET N-CH 20V 9.5A 8-SOIC
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI4346DY-T1-E3SI4346DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.9A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.31W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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