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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
IRF740

IRF740 — MOSFET N-CH 400V 10A TO-220

ПроизводительSTMicroelectronics
Вредные веществаRoHS   Без свинца
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C10A
FET PolarityN-Channel
FET FeatureStandard
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Встречается под наим.497-2931-5
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
STP8NK80ZSTP8NK80ZSTMicroelectronicsMOSFET N-CH 800V 6.2A TO-220
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.2A  ·  Input Capacitance (Ciss) @ Vds: 1320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP4NK50ZDSTP4NK50ZDSTMicroelectronicsMOSFET N-CH 500V 3A TO-220
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 310pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STS10N3LH5STMicroelectronicsMOSFET N-CH 30V 10A 8-SOIC
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 21 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 475pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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STD25NF10LT4STD25NF10LT4STMicroelectronicsMOSFET N-CH 100V 25A DPAK
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STP30NM50NSTP30NM50NSTMicroelectronicsMOSFET N-CH 500V 27A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2740pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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STB8NM60T4STB8NM60T4STMicroelectronicsMOSFET N-CH 650V 8A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STB16NS25T4STB16NS25T4STMicroelectronicsMOSFET N-CH 250V 16A D2PAK
Серия: MESH OVERLAY™  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1270pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 140W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STY100NS20FDSTY100NS20FDSTMicroelectronicsMOSFET N-CH 200V 100A MAX247
Серия: MESH OVERLAY™  ·  Rds On (Max) @ Id, Vgs: 24 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 360nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Through Hole  ·  Package / Case: MAX247™
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STP16NK60ZSTP16NK60ZSTMicroelectronicsMOSFET N-CH 600V 14A TO-220
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 420 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 86nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2650pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STFW4N150STMicroelectronicsMOSFET N-CH 1500V 4A TO3PF
Серия: PowerMESH™  ·  Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1500V (1.5kV)  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 63W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3PF
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STK20N75F3STK20N75F3STMicroelectronicsMOSFET N-CH 75V 20A POLARPAK
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 3150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: PolarPak®
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STP140NF55STP140NF55STMicroelectronicsMOSFET N-CH 55V 80A TO-220
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 142nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP45NF3LLSTP45NF3LLSTMicroelectronicsMOSFET N-CH 30V 45A TO-220
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP3N62K3STP3N62K3STMicroelectronicsMOSFET N-CH 620V 2.7A TO-220
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 620V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 385pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP13NM50NSTP13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STB25NM60N-1STB25NM60N-1STMicroelectronicsMOSFET N-CH 600V 21A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STD60N55F3STD60N55F3STMicroelectronicsMOSFET N-CH 55V 80A DPAK
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 2200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STP60NF06STP60NF06STMicroelectronicsMOSFET N-CH 60V 60A TO-220
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 73nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 1660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP7NM80STP7NM80STMicroelectronicsMOSFET N-CH 800V 6.5A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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STL50NH3LLSTL50NH3LLSTMicroelectronicsMOSFET N-CH 30V 27A PWRFLAT6X5
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 13 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 965pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 4W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerFlat™ (6 x 5)
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STB9NK90ZSTB9NK90ZSTMicroelectronicsMOSFET N-CH 900V 8A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2115pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STV160NF02LT4STV160NF02LT4STMicroelectronicsMOSFET N-CH 20V 160A POWERSO-10
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 160A  ·  Input Capacitance (Ciss) @ Vds: 4800pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 210W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerSO-10 Exposed Bottom Pad
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STP6NK60ZFPSTP6NK60ZFPSTMicroelectronicsMOSFET N-CH 600V 6A TO-220FP
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 905pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STP19NB20STP19NB20STMicroelectronicsMOSFET N-CH 200V 19A TO-220
Серия: PowerMESH™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP270N4F3STMicroelectronicsMOSFET N-CH 40V 120A TO-220
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 120A  ·  Input Capacitance (Ciss) @ Vds: 7400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 330W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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