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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | 2N7000 | STMicroelectronics | MOSFET N-CH 60V 350MA TO-92 Серия: STripFET™ · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 2nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 43pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 3,55 до 33,30 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7000 | Fairchild Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 2,03 до 13,53 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7000,126 | NXP Semiconductors | MOSFET N-CH 60V 300MA TO-92 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 40pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Доп. информация Искать в поставщиках Купить в магазине | |
 | 2N7000BU | Fairchild Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 30pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 2,50 | Доп. информация Искать в поставщиках Купить в магазине |
| 2N7000_D26Z | Fairchild Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 1,69 до 2,98 | Доп. информация Искать в поставщиках Купить в магазине |
| 2N7000_D74Z | Fairchild Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 2,98 | Доп. информация Искать в поставщиках Купить в магазине |
| 2N7000_D75Z | Fairchild Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 3,55 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7000G | ON Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 60pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 4,40 до 24,46 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7000RLRA | ON Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 60pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Доп. информация Искать в поставщиках Купить в магазине | |
 | 2N7000RLRAG | ON Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 60pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 3,23 до 4,65 | Доп. информация Искать в поставщиках Купить в магазине |
| 2N7000RLRMG | ON Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 60pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 4,40 | Доп. информация Искать в поставщиках Купить в магазине |
| 2N7000RLRPG | ON Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 60pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Доп. информация Искать в поставщиках Купить в магазине | |
| 2N7000TA | Fairchild Semiconductor | MOSFET N-CH 60V 200MA TO-92 Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 30pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | от 3,43 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7002 | STMicroelectronics | MOSFET N-CH 60V 200MA SOT-23-3 Серия: STripFET™ · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 2nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 43pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3 | от 1,99 до 3,12 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7002 | Fairchild Semiconductor | MOSFET N-CH 60V 115MA SOT-23 Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 115mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 2,04 до 8,85 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7002,215 | NXP Semiconductors | MOSFET N-CH 60V 300MA SOT-23 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 50pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 1,52 до 16,65 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7002-7 | Diodes Inc | MOSFET N-CH 60V 115MA SOT23-3 Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 115mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | Доп. информация Искать в поставщиках Купить в магазине | |
| 2N7002-7-F | Diodes Inc | MOSFET N-CH 60V 115MA SOT23-3 Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 115mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 2,18 до 17,69 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7002_D87Z | Fairchild Semiconductor | MOSFET N-CH 60V 115MA SOT-23 Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 115mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 1,29 | Доп. информация Искать в поставщиках Купить в магазине |
| 2N7002E,215 | NXP Semiconductors | MOSFET N CH TRENCH 60V SOT23 Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 385mA · Input Capacitance (Ciss) @ Vds: 50pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 2,34 до 19,77 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7002E-7-F | Diodes Inc | MOSFET N-CH 60V 240MA SOT23-3 Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 240mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 7,02 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7002E-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 240MA SOT-23 Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 240mA · Input Capacitance (Ciss) @ Vds: 21pF @ 5V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 10,93 | Доп. информация Искать в поставщиках Купить в магазине |
 | 2N7002ET1G | ON Semiconductor | MOSFET N-CH 60V 260MA SOT-23 Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.81nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 2,15 до 23,41 | Доп. информация Искать в поставщиках Купить в магазине |
| 2N7002ET3G | ON Semiconductor | MOSFET N-CH 60V 260MA SOT-23 Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.81nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 1,13 | Доп. информация Искать в поставщиках Купить в магазине | |
| 2N7002F,215 | NXP Semiconductors | MOSFET N-CH 60V 475MA SOT23 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 475mA · Input Capacitance (Ciss) @ Vds: 50pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 1,33 | Доп. информация Искать в поставщиках Купить в магазине |
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