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SI3469DV-T1-E3 — MOSFET P-CH 20V 5A 6-TSOP
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI4466DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 9.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4346DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 5.9A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.31W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3443BDV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3.6A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.6A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4835BDY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 7.4A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 37nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7.4A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4874BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 12A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 3230pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1058X-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 1.3A SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.3A · Input Capacitance (Ciss) @ Vds: 380pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7120DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 6.3A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7820DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 200V 1.7A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7459DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 13A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3475DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 200V 950MA 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.61 Ohm @ 900mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 950mA · Input Capacitance (Ciss) @ Vds: 500pF @ 50V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 3.2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4630DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 25V 40A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 161nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 6670pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 7.8W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM55P06-19L-E3 | Vishay/Siliconix | MOSFET P-CH 60V 55A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 3500pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8409DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 30V 4.6A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 46 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 26nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.6A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7462DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 200V 2.6A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.6A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5447DC-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3.5A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.5A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI2314EDS-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 3.77A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.77A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3867DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3.9A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.9A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7370DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 9.6A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.6A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI2343DS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 3.1A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 540pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI2312BDS-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 12nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1039X-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 870MA SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 870mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 170mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4447DY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 40V 3.3A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.3A · Input Capacitance (Ciss) @ Vds: 805pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI5476DU-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 12A PPAK CHIPFET Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1100pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 31W · Mounting Type: Surface Mount · Package / Case: PowerPAK® ChipFET Single | Доп. информация Искать в поставщиках | ||
 | SI1410EDH-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 2.9A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5473DC-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 5.9A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 32nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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