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SI2314EDS-T1-E3 — MOSFET N-CH 20V 3.77A SOT23-3
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI7448DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 13.4A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13.4A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM110P08-11L-E3 | Vishay/Siliconix | MOSFET P-CH 80V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 270nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 10850pF @ 40V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 375W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | 2N7002K-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 300MA SOT-23 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 30pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3456BDV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 4.5A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4396DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 16A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1675pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5.4W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| TP0202K-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 385MA SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 385mA · Input Capacitance (Ciss) @ Vds: 31pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4896DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 80V 6.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7403BDN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 8A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 430pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 9.6W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1031R-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 140MA SC-75A Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 250mW · Mounting Type: Surface Mount · Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3483DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 4.7A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1071X-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 960MA SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.64nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 960mA · Input Capacitance (Ciss) @ Vds: 315pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI2316DS-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 2.9A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 215pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1304BDL-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 900MA SOT323-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 2.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 900mA · Input Capacitance (Ciss) @ Vds: 100pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 370mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3447BDV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 4.5A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.5A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1305DL-T1-E3 | Vishay/Siliconix | MOSFET P-CH 8V 860MA SOT323-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 860mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 290mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7382DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 14A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 14A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4425BDY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 8.8A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM60N10-17-E3 | Vishay/Siliconix | MOSFET N-CH 100V 60A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 4300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4890DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 11A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7802DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 250V 1.24A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.24A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3459DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 2.2A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7421DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 6.4A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.4A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4446DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 3.9A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.2A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 12nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.9A · Input Capacitance (Ciss) @ Vds: 700pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3424DV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 5A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.7A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM18N25-165-E3 | Vishay/Siliconix | MOSFET N-CH 250V 18A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 165 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1950pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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