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SUM60N10-17-E3 — MOSFET N-CH 100V 60A D2PAK
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI4427BDY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 9.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 70nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8429DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 8V 11.7A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 26nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.7A · Input Capacitance (Ciss) @ Vds: 1640pF @ 4V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 6.25W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7414DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 5.6A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1472DH-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 5.6A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · Input Capacitance (Ciss) @ Vds: 380pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4850EY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 6A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.7W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4838DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 12V 17A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 17A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | TN0200K-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 730MA SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 730mA · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI5499DC-T1-E3 | Vishay/Siliconix | MOSFET P-CH 8V 6A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 35nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1290pF @ 4V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 6.2W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | Доп. информация Искать в поставщиках | ||
| SI1470DH-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 5.1A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.8A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 510pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5404BDC-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 5.4A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.4A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM110N04-04-E3 | Vishay/Siliconix | MOSFET N-CH 40V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 6800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7366DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 13A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.7W · Mounting Type: Surface Mount · Package / Case: PowerPAK SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8407DB-T2-E1 | Vishay/Siliconix | MOSFET P-CH 20V 5.8A 2X2 6-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 27 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 6-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM52N20-39P-E3 | Vishay/Siliconix | MOSFET N-CH 200V 52A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 38 mOhm @ 20A, 15V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 185nC @ 15V · Current - Continuous Drain (Id) @ 25° C: 52A · Input Capacitance (Ciss) @ Vds: 4220pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.12W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| TP0101K-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 580MA SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 2.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 580mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI2327DS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 200V 380MA SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.35 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 380mA · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4384DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 10A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIE820DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 50A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 143nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 4300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (S) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7483ADP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 14A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM110N06-3M9H-E3 | Vishay/Siliconix | MOSFET N-CH 60V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 15800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8415DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 12V 5.3A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 30nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI1413EDH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 2.3A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4348DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 8A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 23nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.31W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI5486DU-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 12A PPAK CHIPFET Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 54nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 31W · Mounting Type: Surface Mount · Package / Case: PowerPAK® ChipFET Single | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | SI7818DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 2.2A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 135 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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