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IRL620SPBF — MOSFET N-CH 200V 5.2A D2PAK
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | IRFPF50PBF | Vishay/Siliconix | MOSFET N-CH 900V 6.7A TO-247AC Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF840LCL | Vishay/Siliconix | MOSFET N-CH 500V 8A TO-262 Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF614PBF | Vishay/Siliconix | MOSFET N-CH 250V 2.7A TO-220AB Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 8.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 36W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFZ34 | Vishay/Siliconix | MOSFET N-CH 60V 30A TO-220AB Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFU9220 | Vishay/Siliconix | MOSFET P-CH 200V 3.6A I-PAK Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | TP0202K-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 385MA SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 385mA · Input Capacitance (Ciss) @ Vds: 31pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF730PBF | Vishay/Siliconix | MOSFET N-CH 400V 5.5A TO-220AB Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRF9Z30STRL | Vishay/Siliconix | MOSFET P-CH 50V 18A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRFIBC20G | Vishay/Siliconix | MOSFET N-CH 600V 1.7A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
 | SI1071X-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 30V 960MA SC89-6 Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.64nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 960mA · Input Capacitance (Ciss) @ Vds: 315pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFPS43N50K | Vishay/Siliconix | MOSFET N-CH 500V 47A SUPER247 Rds On (Max) @ Id, Vgs: 90 mOhm @ 28A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 350nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 8310pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 540W · Mounting Type: Through Hole · Package / Case: Super-247 | от 0,00 | Доп. информация Искать в поставщиках | |
 | SI7430DP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 150V 26A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 26A · Input Capacitance (Ciss) @ Vds: 1735pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 64W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF540STRLPBF | Vishay/Siliconix | MOSFET N-CH 100V 28A D2PAK Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 72nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI4896DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 80V 6.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFBC40SPBF | Vishay/Siliconix | MOSFET N-CH 600V 6.2A D2PAK Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.2A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFP240PBF | Vishay/Siliconix | MOSFET N-CH 200V 20A TO-247AC Rds On (Max) @ Id, Vgs: 180 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150mW · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF740LCSTRL | Vishay/Siliconix | MOSFET N-CH 400V 10A D2PAK Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI7788DP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V 50A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 125nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 5370pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 69W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRLD120 | Vishay/Siliconix | MOSFET N-CH 100V 1.3A 4-DIP Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 12nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.3A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках |
 | SI7403BDN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 8A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 430pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 9.6W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM90N03-2M2P-E3 | Vishay/Siliconix | MOSFET N-CH 30V 90A D2PAK Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 257nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 12065pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIA456DJ-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 200V 2.6A SC70-6 Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 750mA, 4.5V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.6A · Input Capacitance (Ciss) @ Vds: 350pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1031R-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 140MA SC-75A Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 250mW · Mounting Type: Surface Mount · Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7113DN-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 100V 13.2A 1212-8 Rds On (Max) @ Id, Vgs: 134 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.2A · Input Capacitance (Ciss) @ Vds: 1480pF @ 50V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7448DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 13.4A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13.4A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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