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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
PH6325L,115

- Габаритный чертеж

PH6325L,115 — MOSFET N-CH 25V 78.7A LFPAK

ПроизводительNXP Semiconductors
Вредные веществаRoHS   Без свинца
СерияTrenchMOS™
Rds On (Max) @ Id, Vgs6.3 mOhm @ 25A, 10V
Drain to Source Voltage (Vdss)25V
Gate Charge (Qg) @ Vgs13.3nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C78.7A
Input Capacitance (Ciss) @ Vds1871pF @ 12V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max62.5W
Mounting TypeSurface Mount
Package / CaseLFPak-4
Встречается под наим.568-2181-1
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 1nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 335mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 195pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 2920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 114W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 98nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55.5A  ·  Input Capacitance (Ciss) @ Vds: 3680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK753R4-30B,127NXP SemiconductorsMOSFET N-CH TRENCH 30V TO-220AB
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 20.3A  ·  Input Capacitance (Ciss) @ Vds: 483pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 62W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 34V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2506pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 172W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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PHD9NQ20T,118PHD9NQ20T,118NXP SemiconductorsMOSFET N-CH 200V 8.7A SOT428
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.7A  ·  Input Capacitance (Ciss) @ Vds: 959pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BUK9508-55A,127BUK9508-55A,127NXP SemiconductorsMOSFET N-CH 55V 75A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6021pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 253W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK9907-55ATE,127NXP SemiconductorsMOSFET N-CH 55V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 108nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5836pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 272W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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