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Дискретные полупроводники · MOSFET транзисторы (одиночные)

NTTD4401FR2 — MOSFET P-CH 20V 2.4A 8MICRO

Производитель	ON Semiconductor
Вредные вещества	RoHS Без свинца
Обратите внимание	Снят с производства - 27 июн 2007

Серия	FETKY™
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.3A, 4.5V
Drain to Source Voltage (Vdss)	20V
Gate Charge (Qg) @ Vgs	18nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C	2.4A
Input Capacitance (Ciss) @ Vds	750pF @ 16V
FET Polarity	P-Channel
FET Feature	Diode (Isolated)
Power - Max	780mW
Mounting Type	Surface Mount
Package / Case	8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Встречается под наим.	NTTD4401FR2OS, NTTD4401FR2OS-ND, NTTD4401FR2OSTR

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	NTLGF3501NT1G	ON Semiconductor	MOSFET N-CH 20V 2.8A 6-DFN Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 275pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN		Доп. информация Искать в поставщиках
	NTLGF3501NT2G	ON Semiconductor	MOSFET N-CH 20V 2.8A 6-DFN Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 275pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN	от 0,00	Доп. информация Искать в поставщиках
	NTMSD3P102R2SG	ON Semiconductor	MOSFET P-CH 20V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	NTMSD6N303R2	ON Semiconductor	MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	NTMSD3P102R2G	ON Semiconductor	MOSFET P-CH 20V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	NTMSD3P303R2G	ON Semiconductor	MOSFET P-CH 30V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 24V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	NTTD4401FR2G	ON Semiconductor	MOSFET P-CHAN 20V 3.3A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 780mW · Mounting Type: Surface Mount · Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	NTMSD6N303R2SG	ON Semiconductor	MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	NTLGF3402PT2G	ON Semiconductor	MOSFET P-CH 20V 2.3A 6-DFN Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 350pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN	от 0,00	Доп. информация Искать в поставщиках
	NTMSD3P102R2	ON Semiconductor	MOSFET P-CH 20V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	NTLGF3402PT1G	ON Semiconductor	MOSFET P-CH 20V 2.3A 6-DFN Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 350pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN		Доп. информация Искать в поставщиках
	MMDFS6N303R2	ON Semiconductor	MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 31.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 600pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	NTMSD6N303R2G	ON Semiconductor	MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	NTMSD2P102LR2G	ON Semiconductor	MOSFET P-CH 20V 2.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 710mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	NTMSD2P102LR2	ON Semiconductor	MOSFET P-CH 20V 2.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 710mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках

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