Войти Регистрация |
|
Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
NTMSD6N303R2 | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTMSD3P102R2G | ON Semiconductor | MOSFET P-CH 20V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTMSD3P303R2G | ON Semiconductor | MOSFET P-CH 30V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 24V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTTD4401FR2G | ON Semiconductor | MOSFET P-CHAN 20V 3.3A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 780mW · Mounting Type: Surface Mount · Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP, | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTMSD6N303R2SG | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
NTMSD3P102R2 | ON Semiconductor | MOSFET P-CH 20V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTLGF3402PT1G | ON Semiconductor | MOSFET P-CH 20V 2.3A 6-DFN Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 350pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN | Доп. информация Искать в поставщиках | ||
MMDFS6N303R2 | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 31.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 600pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTMSD6N303R2G | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
NTMSD2P102LR2 | ON Semiconductor | MOSFET P-CH 20V 2.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 710mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTMSD3P102R2SG | ON Semiconductor | MOSFET P-CH 20V 2.34A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
NTLGF3402PT2G | ON Semiconductor | MOSFET P-CH 20V 2.3A 6-DFN Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 350pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN | от 0,00 | Доп. информация Искать в поставщиках | |
NTTD4401FR2 | ON Semiconductor | MOSFET P-CH 20V 2.4A 8MICRO Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 780mW · Mounting Type: Surface Mount · Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP, | Доп. информация Искать в поставщиках | ||
NTLGF3501NT1G | ON Semiconductor | MOSFET N-CH 20V 2.8A 6-DFN Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 275pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN | Доп. информация Искать в поставщиках | ||
NTLGF3501NT2G | ON Semiconductor | MOSFET N-CH 20V 2.8A 6-DFN Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 275pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN | от 0,00 | Доп. информация Искать в поставщиках |
© 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |