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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

NTB5411NT4G — MOSFET N-CH 60V 80A D2PAK

ПроизводительON Semiconductor
Rds On (Max) @ Id, Vgs10 mOhm @ 40A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs130nC @ 10V
Current - Continuous Drain (Id) @ 25° C80A
Input Capacitance (Ciss) @ Vds4500pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max166W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
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Rds On (Max) @ Id, Vgs: 81 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2335pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 28V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 930mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 19.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 16V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-WDFN
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Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.3A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 1280pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-DFN, SO8 FL
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Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 13.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  Input Capacitance (Ciss) @ Vds: 1333pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTMSD6N303R2NTMSD6N303R2ON SemiconductorMOSFET N-CH 30V 6A 8-SOIC
Серия: FETKY™  ·  Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTD40N03R-1GON SemiconductorMOSFET N-CH 25V 7.8A IPAK
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 5.78nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.8A  ·  Input Capacitance (Ciss) @ Vds: 584pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTP75N03L09NTP75N03L09ON SemiconductorMOSFET N-CH 30V 75A TO220AB
Rds On (Max) @ Id, Vgs: 8 mOhm @ 37.5A, 5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5635pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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NTD65N03R-35GON SemiconductorMOSFET N-CH 25V 9.5A IPAK
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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NTHD3133PFT3GON SemiconductorMOSFET P-CH SGL 20V CHIPFET
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  Input Capacitance (Ciss) @ Vds: 680pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-ChipFET™
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NTJS4151PT1GNTJS4151PT1GON SemiconductorMOSFET P-CH 20V 3.3A SC-88
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.3A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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2N7002LT12N7002LT1ON SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 225mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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NTD70N03R-1GON SemiconductorMOSFET N-CH 25V 10A IPAK
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 13.2nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1333pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.36W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTLJS2103PTAGON SemiconductorMOSFET P-CH 12V 3.5A 6-WDFN
Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 1157pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-WDFN
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NTD18N06LT4NTD18N06LT4ON SemiconductorMOSFET N-CH 60V 18A DPAK
Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 675pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTD3055L170-1GON SemiconductorMOSFET N-CH 60V 9A IPAK
Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 275pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTF3055L108T3GNTF3055L108T3GON SemiconductorMOSFET N-CH 60V 3A SOT223
Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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