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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
NTHD2110TT1G | ON Semiconductor | MOSFET P-CH 12V 4.5A CHIPFET Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 1072pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 8-ChipFET™ | Доп. информация Искать в поставщиках | ||
NTB30N20G | ON Semiconductor | MOSFET N-CH 200V 30A D2PAK Rds On (Max) @ Id, Vgs: 81 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2335pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
NTMS4503NR2 | ON Semiconductor | MOSFET N-CH 28V 9A 8-SOIC Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 28V · Gate Charge (Qg) @ Vgs: 23nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2400pF @ 16V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 930mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTD85N02R | ON Semiconductor | MOSFET N-CH 24V 12A DPAK Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 24V · Gate Charge (Qg) @ Vgs: 17.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2050pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
NTMS4101PR2 | ON Semiconductor | MOSFET P-CH 20V 6.9A 8-SOIC Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 32nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.9A · Input Capacitance (Ciss) @ Vds: 3200pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.38W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTB18N06G | ON Semiconductor | MOSFET N-CH 60V 15A D2PAK Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 48.4W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
NTLJS3180PZTAG | ON Semiconductor | MOSFET P-CH 20V 3.5A 6-WDFN Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 1100pF @ 16V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 6-WDFN | от 0,00 | Доп. информация Искать в поставщиках | |
NTJS4151PT1 | ON Semiconductor | MOSFET P-CH 20V 3.3A SOT-363 Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.3A · Input Capacitance (Ciss) @ Vds: 850pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | Доп. информация Искать в поставщиках | ||
NTMFS4701NT3G | ON Semiconductor | MOSFET N-CH 12.3A 30V SO8 FL Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.7A · Input Capacitance (Ciss) @ Vds: 1280pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: 6-DFN, SO8 FL | Доп. информация Искать в поставщиках | ||
NTB75N03RT4G | ON Semiconductor | MOSFET N-CH 25V 9.7A D2PAK Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 1333pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
NTD70N03RT4G | ON Semiconductor | MOSFET PWR N-CHAN 25V 72A DPAK Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13.2nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1333pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.36W · Mounting Type: Surface Mount · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTD2955PT4G | ON Semiconductor | MOSFET P-CH 60V 12A DPAK Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 55W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
NTMSD6N303R2 | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
NTD40N03R-1G | ON Semiconductor | MOSFET N-CH 25V 7.8A IPAK Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 5.78nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.8A · Input Capacitance (Ciss) @ Vds: 584pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
NTP75N03L09 | ON Semiconductor | MOSFET N-CH 30V 75A TO220AB Rds On (Max) @ Id, Vgs: 8 mOhm @ 37.5A, 5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 75nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5635pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
NTD65N03R-35G | ON Semiconductor | MOSFET N-CH 25V 9.5A IPAK Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 16nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9.5A · Input Capacitance (Ciss) @ Vds: 1400pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTHD3133PFT3G | ON Semiconductor | MOSFET P-CH SGL 20V CHIPFET Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 680pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 8-ChipFET™ | Доп. информация Искать в поставщиках | ||
NTJS4151PT1G | ON Semiconductor | MOSFET P-CH 20V 3.3A SC-88 Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.3A · Input Capacitance (Ciss) @ Vds: 850pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2N7002LT1 | ON Semiconductor | MOSFET N-CH 60V 115MA SOT-23 Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 115mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 225mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 | Доп. информация Искать в поставщиках | |
NTD70N03R-1G | ON Semiconductor | MOSFET N-CH 25V 10A IPAK Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13.2nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1333pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.36W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTLJS2103PTAG | ON Semiconductor | MOSFET P-CH 12V 3.5A 6-WDFN Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 15nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 1157pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 6-WDFN | от 0,00 | Доп. информация Искать в поставщиках | |
NTD18N06LT4 | ON Semiconductor | MOSFET N-CH 60V 18A DPAK Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 675pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 55W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
NTD3055L170-1G | ON Semiconductor | MOSFET N-CH 60V 9A IPAK Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 10nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 275pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
NTF3055L108T3G | ON Semiconductor | MOSFET N-CH 60V 3A SOT223 Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 440pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
VN2222LL | ON Semiconductor | MOSFET N-CH 60V 150MA TO-92 Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 150mA · Input Capacitance (Ciss) @ Vds: 60pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Доп. информация Искать в поставщиках |
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