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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
BUK7604-40A,118

BUK7604-40A,118 — MOSFET N-CH 40V 75A SOT404

ПроизводительNXP Semiconductors
Вредные веществаRoHS   Без свинца
СерияTrenchMOS™
Rds On (Max) @ Id, Vgs4.5 mOhm @ 25A, 10V
Drain to Source Voltage (Vdss)40V
Gate Charge (Qg) @ Vgs117nC @ 10V
Current - Continuous Drain (Id) @ 25° C75A
Input Capacitance (Ciss) @ Vds5730pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max300W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
Встречается под наим.BUK7604-40A /T3, BUK7604-40A /T3-ND
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
SI2304DS,215SI2304DS,215NXP SemiconductorsMOSFET N-CH 30V 1.7A SOT23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 195pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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BSH111,215BSH111,215NXP SemiconductorsMOSFET N-CH 55V 335MA SOT-23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 1nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 335mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PMN45EN,165PMN45EN,165NXP SemiconductorsMOSFET N-CH 30V 5.2A SOT457
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 495pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
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BUK725R0-40C,118NXP SemiconductorsMOSFET N-CH TRENCH 40V SOT-428
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3820pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 157W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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PSMN030-150B,118PSMN030-150B,118NXP SemiconductorsMOSFET N-CH 150V 55.5A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 98nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55.5A  ·  Input Capacitance (Ciss) @ Vds: 3680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK9219-55A,118BUK9219-55A,118NXP SemiconductorsMOSFET N-CH 55V 55A DPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 2920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 114W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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PHP225NQ04T,127PHP225NQ04T,127NXP SemiconductorsMOSFET N-CH 40V 75A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK9240-100A,118BUK9240-100A,118NXP SemiconductorsMOSFET N-CH 100V 33A DPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 3072pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 114W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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PSMN006-20K,518PSMN006-20K,518NXP SemiconductorsMOSFET N-CH 20V 32A 8-SOIC
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 2.5V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 8.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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BUK7908-40AIE,127NXP SemiconductorsMOSFET N-CH 40V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 221W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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BUK7526-100B,127BUK7526-100B,127NXP SemiconductorsMOSFET N-CH 100V 49A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 2891pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 157W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 6.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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PHM25NQ10T,518NXP SemiconductorsMOSFET N-CH 100V 30.7A SOT685-1
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 26.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30.7A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-HVSON
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BUK9608-55A,118BUK9608-55A,118NXP SemiconductorsMOSFET N-CH 55V 75A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6021pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 253W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK9509-75A,127BUK9509-75A,127NXP SemiconductorsMOSFET N-CH 75V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 8840pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PSMN2R0-30YL,115PSMN2R0-30YL,115NXP SemiconductorsMOSFET N-CH 30V 100A LFPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3980pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 97W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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BUK7L11-34ARC,127BUK7L11-34ARC,127NXP SemiconductorsMOSFET N-CH 34V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 34V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2506pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 172W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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PHD9NQ20T,118PHD9NQ20T,118NXP SemiconductorsMOSFET N-CH 200V 8.7A SOT428
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.7A  ·  Input Capacitance (Ciss) @ Vds: 959pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BUK9508-55A,127BUK9508-55A,127NXP SemiconductorsMOSFET N-CH 55V 75A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6021pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 253W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PHD55N03LTA,118PHD55N03LTA,118NXP SemiconductorsMOSFET N-CH 25V 55A SOT428
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 85W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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PH955L,115PH955L,115NXP SemiconductorsMOSFET N-CH 55V 62.5A LFPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 62.5A  ·  Input Capacitance (Ciss) @ Vds: 2836pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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BUK7575-55A,127BUK7575-55A,127NXP SemiconductorsMOSFET N-CH 55V 20.3A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 20.3A  ·  Input Capacitance (Ciss) @ Vds: 483pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 62W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PHU66NQ03LT,127PHU66NQ03LT,127NXP SemiconductorsMOSFET N-CH 25V 66A SPT533
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 66A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 93W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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PMN34UN,135PMN34UN,135NXP SemiconductorsMOSFET N-CH 30V 4.9A SOT457
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 9.9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.9A  ·  Input Capacitance (Ciss) @ Vds: 790pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
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BUK753R4-30B,127NXP SemiconductorsMOSFET N-CH TRENCH 30V TO-220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4951pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 255W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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