 |
2N7002E-T1-E3 — MOSFET N-CH 60V 240MA SOT-23
| ||||||||||||||||||||||||||
| Войти Регистрация |
|
|||||||||||||||||||||||||||||
| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI4413CDY-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 30V 8-SOIC Drain to Source Voltage (Vdss): 30V · FET Polarity: P-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFUC20PBF | Vishay/Siliconix | MOSFET N-CH 600V 2A I-PAK Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRF540SPBF | Vishay/Siliconix | MOSFET N-CH 100V 28A D2PAK Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 72nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFL41N15D | Vishay/Siliconix | MOSFET N-CH 150V 41A D2PAK Drain to Source Voltage (Vdss): 150V · Current - Continuous Drain (Id) @ 25° C: 41A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRC740 | Vishay/Siliconix | MOSFET N-CH 400V 10A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF740ASTRRPBF | Vishay/Siliconix | MOSFET N-CH 400V 10A D2PAK Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1030pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFU4105ZTR | Vishay/Siliconix | MOSFET N-CH 55V 30A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 740pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 48W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRLD014 | Vishay/Siliconix | MOSFET N-CH 60V 1.7A 4-DIP Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 8.4nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках |
| IRFUC20 | Vishay/Siliconix | MOSFET N-CH 600V 2A I-PAK Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF9620 | Vishay/Siliconix | MOSFET P-CH 200V 3.5A TO-220AB Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF644NSTRLPBF | Vishay/Siliconix | MOSFET N-CH 250V 14A D2PAK Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1060pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IRFBE20L | Vishay/Siliconix | MOSFET N-CH 800V 1.8A TO-262 Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 530pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 54W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF9Z30PBF | Vishay/Siliconix | MOSFET P-CH 50V 18A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFR310TR | Vishay/Siliconix | MOSFET N-CH 400V 1.7A DPAK Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 170pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRFB9N30APBF | Vishay/Siliconix | MOSFET N-CH 300V 9.3A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
 | IRFIBC40GLC | Vishay/Siliconix | MOSFET N-CH 600V 3.5A TO220FP Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFL014 | Vishay/Siliconix | MOSFET N-CH 60V 2.7A SOT223 Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF9Z10PBF | Vishay/Siliconix | MOSFET P-CH 50V 6.7A TO-220AB Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 270pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 43W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3430DV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 100V 1.8A 6-TSOP Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 6.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFBF20LPBF | Vishay/Siliconix | MOSFET N-CH 900V 1.7A TO-262 Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF720PBF | Vishay/Siliconix | MOSFET N-CH 400V 3.3A TO-220AB Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.3A · Input Capacitance (Ciss) @ Vds: 410pF @ 25 V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIA414DJ-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 8V 12A SC70-6 Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1800pF @ 4V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3473DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 5.9A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 33nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFPF40PBF | Vishay/Siliconix | MOSFET N-CH 900V 4.7A TO-247AC Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.7A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFS9N60ATRL | Vishay/Siliconix | MOSFET N-CH 600V 9.2A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.2A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| © 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |
RoHS 
Без свинца