 - Габаритный чертеж |
IRFR310TR — MOSFET N-CH 400V 1.7A DPAK
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI2333CDS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 7.1A SOT23-3 Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.1A · Input Capacitance (Ciss) @ Vds: 1225pF @ 6V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4413CDY-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 30V 8-SOIC Drain to Source Voltage (Vdss): 30V · FET Polarity: P-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP354PBF | Vishay/Siliconix | MOSFET N-CH 450V 14A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | Доп. информация Искать в поставщиках | |
| IRFU9014 | Vishay/Siliconix | MOSFET P-CH 60V 5.1A I-PAK Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 270pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRLZ44STRL | Vishay/Siliconix | MOSFET N-CH 60V 50A D2PAK Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 66nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF840LCL | Vishay/Siliconix | MOSFET N-CH 500V 8A TO-262 Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFDC20 | Vishay/Siliconix | MOSFET N-CH 600V 320MA 4-DIP Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 320mA · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF614PBF | Vishay/Siliconix | MOSFET N-CH 250V 2.7A TO-220AB Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 8.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 36W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFBC30AL | Vishay/Siliconix | MOSFET N-CH 600V 3.6A TO-262 Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFZ34 | Vishay/Siliconix | MOSFET N-CH 60V 30A TO-220AB Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFU9220 | Vishay/Siliconix | MOSFET P-CH 200V 3.6A I-PAK Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFI710G | Vishay/Siliconix | MOSFET N-CH 400V 1.6A TO220FP Серия: HEXFET® · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 1.6A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
| IRF630STRL | Vishay/Siliconix | MOSFET N-CH 200V 9A D2PAK Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SIA810DJ-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 4.5A SC-70-6 Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11.5nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 400pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 6.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 Dual | Доп. информация Искать в поставщиках | |
| IRF9Z34STRLPBF | Vishay/Siliconix | MOSFET P-CH 60V 18A D2PAK Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFBE30STRR | Vishay/Siliconix | MOSFET N-CH 800V 4.1A D2PAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.1A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SIA417DJ-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 8V 12A SC70-6 Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1600pF @ 4V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7812DN-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 75V 16A 1212-8 Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 840pF @ 35V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | SI3455ADV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 2.7A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFP340 | Vishay/Siliconix | MOSFET N-CH 400V 11A TO-247AC Rds On (Max) @ Id, Vgs: 550 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках |
| IRFP244 | Vishay/Siliconix | MOSFET N-CH 250V 15A TO-247AC Rds On (Max) @ Id, Vgs: 280 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFR110 | Vishay/Siliconix | MOSFET N-CH 100V 4.3A DPAK Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 180pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF9640L | Vishay/Siliconix | MOSFET P-CH 200V 11A TO-262 Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| SI7454DP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 100V 5A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 34 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFUC20PBF | Vishay/Siliconix | MOSFET N-CH 600V 2A I-PAK Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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