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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
STP14NK50Z

- Габаритный чертеж

STP14NK50Z — MOSFET N-CH 500V 14A TO-220

ПроизводительSTMicroelectronics
Вредные веществаRoHS   Без свинца
СерияSuperMESH™
Rds On (Max) @ Id, Vgs380 mOhm @ 6A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs92nC @ 10V
Current - Continuous Drain (Id) @ 25° C14A
Input Capacitance (Ciss) @ Vds2000pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max150W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Встречается под наим.497-4526-5
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
STD3NK80ZT4STD3NK80ZT4STMicroelectronicsMOSFET N-CH 800V 2.5A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 485pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STD5NK40ZT4STD5NK40ZT4STMicroelectronicsMOSFET N-CH 400V 3A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 305pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STW12NK95ZSTW12NK95ZSTMicroelectronicsMOSFET N-CH 950V 10A TO-247
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 950V  ·  Gate Charge (Qg) @ Vgs: 113nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STP7N52K3STMicroelectronicsMOSFET N-CH 525V 6.2A TO220
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 525V  ·  Current - Continuous Drain (Id) @ 25° C: 6.3A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STD1NK80ZT4STD1NK80ZT4STMicroelectronicsMOSFET N-CH 800V 1A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 7.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STD5NK52ZDSTD5NK52ZDSTMicroelectronicsMOSFET N-CH 520V 4.4A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 520V  ·  Gate Charge (Qg) @ Vgs: 16.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 529pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STB9NK70ZT4STB9NK70ZT4STMicroelectronicsMOSFET N-CH 700V 7.5A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 700V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 1370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STB10NK60ZT4STB10NK60ZT4STMicroelectronicsMOSFET N-CH 600V 10A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STB5NK50ZT4STB5NK50ZT4STMicroelectronicsMOSFET N-CH 500V 4.4A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 535pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STB14NK50Z-1STMicroelectronicsMOSFET N-CH 500V 14A I2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STD6NK50ZT4STD6NK50ZT4STMicroelectronicsMOSFET N-CH 500V 5.6A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 24.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 690pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STW13NK100ZSTW13NK100ZSTMicroelectronicsMOSFET N-CH 1KV 13A TO-247
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 266nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 6000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 350W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STW18NK80ZSTW18NK80ZSTMicroelectronicsMOSFET N-CH 800V 19A TO-247
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 6100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 350W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STB9NK90ZSTB9NK90ZSTMicroelectronicsMOSFET N-CH 900V 8A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2115pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STF6N62K3STMicroelectronicsMOSFET N-CH 620V 5.5A TO-220FP
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.28 Ohm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 620V  ·  Gate Charge (Qg) @ Vgs: 25.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 706pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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STB4NK60ZT4STB4NK60ZT4STMicroelectronicsMOSFET N-CH 600V 4A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STD1NK60-1STMicroelectronicsMOSFET N-CH 600V 1A IPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 156pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STW18NK60ZSTW18NK60ZSTMicroelectronicsMOSFET N-CH 600V 16A TO-247
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 360 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 3540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STN1HNK60STN1HNK60STMicroelectronicsMOSFET N-CH 600V 400MA SOT223
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 400mA  ·  Input Capacitance (Ciss) @ Vds: 156pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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STW14NK50ZSTW14NK50ZSTMicroelectronicsMOSFET N-CH 500V 14A TO-247
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STD6N52K3STMicroelectronicsMOSFET N-CH 525V 5A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 525V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STB11NK50ZT4STB11NK50ZT4STMicroelectronicsMOSFET N-CH 500V 10A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1390pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STU6N62K3STMicroelectronicsMOSFET N-CH 620V 5.5A IPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.28 Ohm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 620V  ·  Gate Charge (Qg) @ Vgs: 25.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 706pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STP3HNK90ZSTP3HNK90ZSTMicroelectronicsMOSFET N-CH 800V 3A TO-220
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 690pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STD5NK52ZD-1STD5NK52ZD-1STMicroelectronicsMOSFET N-CH 520V 4.4A I-PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 520V  ·  Gate Charge (Qg) @ Vgs: 16.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 529pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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