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SN7002N L6433 — MOSFET N-CH 60V 200MA SOT-23

ПроизводительInfineon Technologies
Вредные веществаRoHS   Без свинца
СерияSIPMOS®
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs1.5nC @ 10V
Current - Continuous Drain (Id) @ 25° C200mA
Input Capacitance (Ciss) @ Vds45pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max360mW
Mounting TypeSurface Mount
Package / CaseSOT-23
Встречается под наим.SP000247306
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Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Gate Charge (Qg) @ Vgs: 5.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 97pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-89
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Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 240nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 4540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSP171PE6327BSP171PE6327Infineon TechnologiesMOSFET P-CH 60V 1.9A SOT223
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Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 175W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUZ32BUZ32Infineon TechnologiesMOSFET N-CH 200V 9.5A TO220AB
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 75W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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SPB10N10 GSPB10N10 GInfineon TechnologiesMOSFET N-CH 100V 10.3A D2PAK
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 19.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10.3A  ·  Input Capacitance (Ciss) @ Vds: 426pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSS123 L6327BSS123 L6327Infineon TechnologiesMOSFET N-CH 100V 170MA SOT-23
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 69pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSP89 L6327BSP89 L6327Infineon TechnologiesMOSFET N-CH 240V 350MA SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Gate Charge (Qg) @ Vgs: 6.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 350mA  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSP613PBSP613PInfineon TechnologiesMOSFET P-CH 60V 2.9A SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.9A  ·  Input Capacitance (Ciss) @ Vds: 875pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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SPP47N10LInfineon TechnologiesMOSFET N-CH 100V 47A TO-220
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 135nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 175W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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SN7002N L6327SN7002N L6327Infineon TechnologiesMOSFET N-CH 60V 200MA SOT-23
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 45pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSP149 L6327BSP149 L6327Infineon TechnologiesMOSFET N-CH 200V 660MA SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 660mA  ·  Input Capacitance (Ciss) @ Vds: 430pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Gate Charge (Qg) @ Vgs: 3.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110mA  ·  Input Capacitance (Ciss) @ Vds: 77pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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SPD09P06PLSPD09P06PLInfineon TechnologiesMOSFET P-CH 60V 9.7A DPAK
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 42W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SPD18P06P GInfineon TechnologiesMOSFET P-CH 60V 18.6A TO252-3
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18.6A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSP373 L6327BSP373 L6327Infineon TechnologiesMOSFET N-CH 100V 1.7A SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSP88E6327BSP88E6327Infineon TechnologiesMOSFET N-CH 240V 350MA SOT223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Gate Charge (Qg) @ Vgs: 6.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 350mA  ·  Input Capacitance (Ciss) @ Vds: 95pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSP315PE6327TBSP315PE6327TInfineon TechnologiesMOSFET P-CH 60V 1.17A SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 7.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.17A  ·  Input Capacitance (Ciss) @ Vds: 160pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSP296 L6327BSP296 L6327Infineon TechnologiesMOSFET N-CH 100V 1.1A SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 364pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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SPB08P06P GSPB08P06P GInfineon TechnologiesMOSFET P-CH 60V 8.8A TO-263
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.8A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 42W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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