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SI3440DV-T1-E3 — MOSFET N-CH 150V 1.2A 6-TSOP
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI3455ADV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 2.7A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7898DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 3A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4427BDY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 9.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 70nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3433BDV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 4.3A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1411DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 150V 420MA SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 6.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 420mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI1419DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 200V 300MA SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 400mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 6.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1499DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 8V 1.6A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 16nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 650pF @ 4V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.78W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3473DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 5.9A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 33nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7448DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 13.4A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13.4A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7456DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 100V 5.7A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.7A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5406DC-T1-E3 | Vishay/Siliconix | MOSFET N-CH 12V 6.9A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIE832DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 77nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3800pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (S) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4874BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 12A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 3230pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM110P08-11L-E3 | Vishay/Siliconix | MOSFET P-CH 80V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 270nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 10850pF @ 40V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 375W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1058X-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 1.3A SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.3A · Input Capacitance (Ciss) @ Vds: 380pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8429DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 8V 11.7A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 26nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.7A · Input Capacitance (Ciss) @ Vds: 1640pF @ 4V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 6.25W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | 2N7002K-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 300MA SOT-23 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 30pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3456BDV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 4.5A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | BS250KL-TR1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 270MA TO92-18RM Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 3nC @ 15V · Current - Continuous Drain (Id) @ 25° C: 270mA · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 800mW · Mounting Type: Through Hole · Package / Case: TO-18-3, TO-92-18RM | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIA411DJ-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 12A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 38nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3467DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3.8A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3460BDV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 8A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 24nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.5W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4396DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 16A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1675pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5.4W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7414DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 5.6A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4418DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 200V 2.3A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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