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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
PHP14NQ20T,127

PHP14NQ20T,127 — MOSFET N-CH 200V 14A SOT78

ПроизводительNXP Semiconductors
Вредные веществаRoHS   Без свинца
СерияTrenchMOS™
Rds On (Max) @ Id, Vgs230 mOhm @ 7A, 10V
Drain to Source Voltage (Vdss)200V
Gate Charge (Qg) @ Vgs38nC @ 10V
Current - Continuous Drain (Id) @ 25° C14A
Input Capacitance (Ciss) @ Vds1500pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-220AB-3
Встречается под наим.PHP14NQ20T, PHP14NQ20T-ND
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 1280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 97W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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PHP110NQ08T,127PHP110NQ08T,127NXP SemiconductorsMOSFET N-CH 75V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 113.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 21.7A  ·  Input Capacitance (Ciss) @ Vds: 1690pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 88W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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PHU108NQ03LT,127PHU108NQ03LT,127NXP SemiconductorsMOSFET N-CH 25V 75A SOT533
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 16.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 1375pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 187W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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BUK7107-40ATC,118BUK7107-40ATC,118NXP SemiconductorsMOSFET N-CH 40V 75A D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 108nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 272W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (4 leads + tab)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 46A  ·  Input Capacitance (Ciss) @ Vds: 1815pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 105W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PH3075L,115PH3075L,115NXP SemiconductorsMOSFET N-CH 75V 30A LFPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2070pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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PMG370XN,115PMG370XN,115NXP SemiconductorsMOSFET N-CH 30V 0.96A SOT363
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 0.65nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 960mA  ·  Input Capacitance (Ciss) @ Vds: 37pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 690mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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BUK7623-75A,118BUK7623-75A,118NXP SemiconductorsMOSFET N-CH 75V 53A D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Current - Continuous Drain (Id) @ 25° C: 53A  ·  Input Capacitance (Ciss) @ Vds: 2385pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 138W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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PHB225NQ04T,118PHB225NQ04T,118NXP SemiconductorsMOSFET N-CH 40V 75A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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2N7002F,2152N7002F,215NXP SemiconductorsMOSFET N-CH 60V 475MA SOT23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 475mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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BSP030,115BSP030,115NXP SemiconductorsMOSFET N-CH 30V 10A SOT223
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 8.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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PHB29N08T,118PHB29N08T,118NXP SemiconductorsMOSFET N-CH 75V 27A D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 14A, 11V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 810pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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PHT4NQ10LT,135PHT4NQ10LT,135NXP SemiconductorsMOSFET N-CH 100V 3.5A SOT223
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.75A, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12.2nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 374pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 6.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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PMV60EN,215PMV60EN,215NXP SemiconductorsMOSFET N-CH 30V 4.7A SOT-23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 9.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.7A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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BUK9611-55A,118BUK9611-55A,118NXP SemiconductorsMOSFET N-CH 55V 75A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4230pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 166W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK963R2-40B,118BUK963R2-40B,118NXP SemiconductorsMOSFET N-CH 40V 100A D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10502pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK7610-100B,118BUK7610-100B,118NXP SemiconductorsMOSFET N-CH 100V 75A D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6773pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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PH8230E,115PH8230E,115NXP SemiconductorsMOSFET N-CH 30V 67A LFPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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BUK7575-100A,127BUK7575-100A,127NXP SemiconductorsMOSFET N-CH 100V 23A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 1210pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 99W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK9277-55A,118BUK9277-55A,118NXP SemiconductorsMOSFET N-CH 55V 18A DPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 643pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 51W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BUK761R8-30C,118NXP SemiconductorsMOSFET N-CH TRENCH 30V D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10349pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 333W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK7611-55B,118BUK7611-55B,118NXP SemiconductorsMOSFET N-CH 55V 75A D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2604pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 157W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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