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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
PH3830L,115

- Габаритный чертеж

PH3830L,115 — MOSFET N-CH 30V 98A LFPAK

ПроизводительNXP Semiconductors
Вредные веществаRoHS   Без свинца
СерияTrenchMOS™
Rds On (Max) @ Id, Vgs3.8 mOhm @ 25A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs33nC @ 5V
Current - Continuous Drain (Id) @ 25° C98A
Input Capacitance (Ciss) @ Vds3190pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max62.5W
Mounting TypeSurface Mount
Package / CaseLFPak-4
Встречается под наим.568-2346-6
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 7124pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 254W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4901pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 203W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.1A  ·  Input Capacitance (Ciss) @ Vds: 1310pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 110V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27.6A  ·  Input Capacitance (Ciss) @ Vds: 1240pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 107W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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