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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

NTD3817N-1G — MOSFET N-CH 16V 7.6A IPAK

ПроизводительON Semiconductor
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs13.9 mOhm @ 15A, 10V
Drain to Source Voltage (Vdss)16V
Gate Charge (Qg) @ Vgs10.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C7.6A
Input Capacitance (Ciss) @ Vds702pF @ 12V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max1.2W
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
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Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.1A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 870mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTD4804NT4GON SemiconductorMOSFET N-CH 30V 14.5A DPAK
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14.5A  ·  Input Capacitance (Ciss) @ Vds: 4490pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.43W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTMFS4119NT1GNTMFS4119NT1GON SemiconductorMOSFET N-CHAN 18A 30V SO8 FL
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 4800pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 5-DFN, SO8 FL
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NTD4815N-35GON SemiconductorMOSFET N-CH 35A 30V IPAK TRIMMED
Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.9A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.26W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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Rds On (Max) @ Id, Vgs: 350 mOhm @ 890mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 750mA  ·  Input Capacitance (Ciss) @ Vds: 120pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 310mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-723
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Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 2677pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 890mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 5-DFN, SO8 FL
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NTD78N03GNTD78N03GON SemiconductorMOSFET N-CH 25V 11.4A DPAK
Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.4A  ·  Input Capacitance (Ciss) @ Vds: 2250pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTD3055L170GNTD3055L170GON SemiconductorMOSFET N-CH 60V 9A DPAK
Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 275pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTMSD3P102R2NTMSD3P102R2ON SemiconductorMOSFET P-CH 20V 2.34A 8-SOIC
Серия: FETKY™  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.34A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 16V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 730mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTLGF3402PT1GON SemiconductorMOSFET P-CH 20V 2.3A 6-DFN
Серия: FETKY™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-DFN
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NTP60N06LGNTP60N06LGON SemiconductorMOSFET N-CH 60V 60A TO220AB
Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 3075pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.4W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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NTD18N06L-1GON SemiconductorMOSFET N-CH 60V 18A IPAK
Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 675pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTD18N06-001ON SemiconductorMOSFET N-CH 60V 18A TO-251A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTD5407NGON SemiconductorMOSFET N-CH 40V 38A DPAK
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 32V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTMS4807NR2GON SemiconductorMOSFET N-CH 30V 9.1A 8-SOIC
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 14.8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.1A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 860mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTD4302GNTD4302GON SemiconductorMOSFET N-CH 30V 8.4A DPAK
Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.4A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.04W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTD15N06-001ON SemiconductorMOSFET N-CH 60V 15A TO-251A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTJS3151PT2NTJS3151PT2ON SemiconductorMOSFET P-CH 12V 2.7A SOT-363
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 8.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 12V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 625mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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BSS123LT1BSS123LT1ON SemiconductorMOSFET N-CH 100V 170MA SOT-23
Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 20pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 225mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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