Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRL1004 — MOSFET N-CH 40V 130A TO-220AB

Производитель	International Rectifier

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 78A, 10V
Drain to Source Voltage (Vdss)	40V
Gate Charge (Qg) @ Vgs	100nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C	130A
Input Capacitance (Ciss) @ Vds	5330pF @ 25V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Встречается под наим.	*IRL1004

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRFPS3815PBF	International Rectifier	MOSFET N-CH 150V 105A SUPER247 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 63A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 390nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 105A · Input Capacitance (Ciss) @ Vds: 6810pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 441W · Mounting Type: Through Hole · Package / Case: Super-247-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRLR7821CTRPBF	International Rectifier	MOSFET N-CH 30V 65A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 1030pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 75W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRL1404SPBF	International Rectifier	MOSFET N-CH 40V 160A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 140nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 160A · Input Capacitance (Ciss) @ Vds: 6600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF3706PBF	International Rectifier	MOSFET N-CH 20V 77A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 35nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 77A · Input Capacitance (Ciss) @ Vds: 2410pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRF7493TR	International Rectifier	MOSFET N-CH 80V 9.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 1510pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRFR3303TRL	International Rectifier	MOSFET N-CH 30V 33A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 57W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF530NSPBF	International Rectifier	MOSFET N-CH 100V 17A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRLL024Z	International Rectifier	MOSFET N-CH 55V 5A SOT223 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 380pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00	Доп. информация Искать в поставщиках
	IRLR8711CTRPBF	International Rectifier	MOSFET N-CH 25V 84A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 1640pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFR2407TR	International Rectifier	MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFZ24NS	International Rectifier	MOSFET N-CH 55V 17A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRL7833STRRPBF	International Rectifier	MOSFET N-CH 30V 150A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 47nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 150A · Input Capacitance (Ciss) @ Vds: 4170pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SI4420DY	International Rectifier	MOSFET N-CH 30V 12.5A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12.5A · Input Capacitance (Ciss) @ Vds: 2240pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7220TR	International Rectifier	MOSFET P-CH 14V 11A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V · Drain to Source Voltage (Vdss): 14V · Gate Charge (Qg) @ Vgs: 125nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 8075pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRLR8103TR	International Rectifier	MOSFET N-CH 30V 89A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 89A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 89W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IRFR2905ZTRL	International Rectifier	MOSFET N-CH 55V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFP1405PBF	International Rectifier	MOSFET N-CH 55V 95A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 95A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 95A · Input Capacitance (Ciss) @ Vds: 5600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 310W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF5210PBF	International Rectifier	MOSFET P-CH 100V 40A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF1312PBF	International Rectifier	MOSFET N-CH 80V 95A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 10 mOhm @ 57A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 95A · Input Capacitance (Ciss) @ Vds: 5450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRF3205SPBF	International Rectifier	MOSFET N-CH 55V 110A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 146nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 3247pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF6715MTR1PBF	International Rectifier	MOSFET N-CH 25V 34A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 59nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 5340pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric MX	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRL8113L	International Rectifier	MOSFET N-CH 30V 105A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 35nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 105A · Input Capacitance (Ciss) @ Vds: 2840pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRF7807VPBF	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRFR3412PBF	International Rectifier	MOSFET N-CH 100V 48A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 48A · Input Capacitance (Ciss) @ Vds: 3430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IRF630NL	International Rectifier	MOSFET N-CH 200V 9.3A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 575pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 82W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках

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