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IRFIZ14G — MOSFET N-CH 60V 8A TO220FP
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IRF9640L | Vishay/Siliconix | MOSFET P-CH 200V 11A TO-262 Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF730A | Vishay/Siliconix | MOSFET N-CH 400V 5.5A TO-220AB Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR9220TRL | Vishay/Siliconix | MOSFET P-CH 200V 3.6A DPAK Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | IRL520S | Vishay/Siliconix | MOSFET N-CH 100V 9.2A D2PAK Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 12nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9.2A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI8429DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 8V 11.7A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 26nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.7A · Input Capacitance (Ciss) @ Vds: 1640pF @ 4V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 6.25W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFBC40APBF | Vishay/Siliconix | MOSFET N-CH 600V 6.2A TO-220AB Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.2A · Input Capacitance (Ciss) @ Vds: 1036pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIR840DP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V POWERPAK 8-SOIC Drain to Source Voltage (Vdss): 30V · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFBC30A | Vishay/Siliconix | MOSFET N-CH 600V 3.6A TO-220AB Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4480DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 80V 6A 8-SOIC Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI6459BDQ-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 60V 2.2A 8-TSSOP Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFD210 | Vishay/Siliconix | MOSFET N-CH 200V 600MA 4-DIP Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 360mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 8.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 600mA · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках |
| IRFBC20STRR | Vishay/Siliconix | MOSFET N-CH 600V 2.2A D2PAK Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFRC20TRPBF | Vishay/Siliconix | MOSFET N-CH 600V 2A DPAK Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFU1N60A | Vishay/Siliconix | MOSFET N-CH 600V 1.4A I-PAK Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 229pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 36W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFU024 | Vishay/Siliconix | MOSFET N-CH 60V 14A I-PAK Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF624S | Vishay/Siliconix | MOSFET N-CH 250V 4.4A D2PAK Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.4A · Input Capacitance (Ciss) @ Vds: 260pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRLR8103TRL | Vishay/Siliconix | MOSFET N-CH 30V 89A DPAK Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 89A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 89W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF9510L | Vishay/Siliconix | MOSFET P-CH 100V 4A TO-262 Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4A · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI7414DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 5.6A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF820 | Vishay/Siliconix | MOSFET N-CH 500V 2.5A TO-220AB Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP244 | Vishay/Siliconix | MOSFET N-CH 250V 15A TO-247AC Rds On (Max) @ Id, Vgs: 280 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFI730G | Vishay/Siliconix | MOSFET N-CH 400V 3.7A TO220FP Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.7A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
 | SI7852ADP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 80V 30A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1825pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 62.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFP450LCPBF | Vishay/Siliconix | MOSFET N-CH 500V 14A TO-247AC Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 74nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 2200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF740L | Vishay/Siliconix | MOSFET N-CH 400V 10A TO-220AB Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
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