Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRF7470 — MOSFET N-CH 40V 10A 8-SOIC

Производитель	International Rectifier

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	13 mOhm @ 10A, 10V
Drain to Source Voltage (Vdss)	40V
Gate Charge (Qg) @ Vgs	44nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C	10A
Input Capacitance (Ciss) @ Vds	3430pF @ 20V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	2.5W
Mounting Type	Surface Mount
Package / Case	8-SOIC (3.9mm Width)
Встречается под наим.	*IRF7470

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRFR9120NTRL	International Rectifier	MOSFET P-CH 100V 6.6A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFB4110GPBF	International Rectifier	MOSFET N-CH 100V 120A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 9620pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 370W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF8721GTRPBF	International Rectifier	MOSFET N-CH 30V 14A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1040pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRL2203NLPBF	International Rectifier	MOSFET N-CH 30V 116A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 116A · Input Capacitance (Ciss) @ Vds: 3290pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRF640NSTRL	International Rectifier	MOSFET N-CH 200V 18A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF9Z24NLPBF	International Rectifier	MOSFET P-CH 55V 12A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7457TR	International Rectifier	MOSFET N-CH 20V 15A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 42nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 3100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF4905SPBF	International Rectifier	MOSFET P-CH 55V 42A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 3500pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRL5602	International Rectifier	MOSFET P-CH 20V 24A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 1460pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRF5210S	International Rectifier	MOSFET P-CH 100V 40A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFL024Z	International Rectifier	MOSFET N-CH 55V 5.1A SOT223 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Доп. информация Искать в поставщиках
	IRL2703STRL	International Rectifier	MOSFET N-CH 30V 24A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRF9Z34NSPBF	International Rectifier	MOSFET P-CH 55V 19A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7493TRPBF	International Rectifier	MOSFET N-CH 80V 9.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 1510pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRFR2307Z	International Rectifier	MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 75nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2190pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IRLR8713TRLPBF	International Rectifier	MOSFET N-CH 25V 100A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 26nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2240pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 81W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF3706STRRPBF	International Rectifier	MOSFET N-CH 20V 77A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 35nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 77A · Input Capacitance (Ciss) @ Vds: 2410pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRLR120NTR	International Rectifier	MOSFET N-CH 100V 10A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 185 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 440pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 48W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF9530NSPBF	International Rectifier	MOSFET P-CH 100V 14A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 760pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7450PBF	International Rectifier	MOSFET N-CH 200V 2.5A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 940pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF3709ZCSTRLP	International Rectifier	MOSFET N-CH 30V 87A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 26nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 87A · Input Capacitance (Ciss) @ Vds: 2130pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF1010ESTRLPBF	International Rectifier	MOSFET N-CH 60V 84A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 3210pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF5803TRPBF	International Rectifier	MOSFET P-CH 40V 3.4A 6-TSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 1110pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP	от 0,00	Доп. информация Искать в поставщиках
	IRLZ44NSTRRPBF	International Rectifier	MOSFET N-CH 55V 47A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 48nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7495	International Rectifier	MOSFET N-CH 100V 7.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 51nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 1530pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках

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