Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRF7458 — MOSFET N-CH 30V 14A 8-SOIC

Производитель	International Rectifier

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	8 mOhm @ 14A, 16V
Drain to Source Voltage (Vdss)	30V
Gate Charge (Qg) @ Vgs	59nC @ 10V
Current - Continuous Drain (Id) @ 25° C	14A
Input Capacitance (Ciss) @ Vds	2410pF @ 15V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	2.5W
Mounting Type	Surface Mount
Package / Case	8-SOIC (3.9mm Width)
Встречается под наим.	*IRF7458

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRF630NL	International Rectifier	MOSFET N-CH 200V 9.3A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 575pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 82W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRF1310NPBF	International Rectifier	MOSFET N-CH 100V 42A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFR2405PBF	International Rectifier	MOSFET N-CH 55V 56A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 56A · Input Capacitance (Ciss) @ Vds: 2430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF7807VPBF	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRFPS3815PBF	International Rectifier	MOSFET N-CH 150V 105A SUPER247 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 63A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 390nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 105A · Input Capacitance (Ciss) @ Vds: 6810pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 441W · Mounting Type: Through Hole · Package / Case: Super-247-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRF7473	International Rectifier	MOSFET N-CH 100V 6.9A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 61nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.9A · Input Capacitance (Ciss) @ Vds: 3180pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFIZ34EPBF	International Rectifier	MOSFET N-CH 60V 21A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 37W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF3708STRR	International Rectifier	MOSFET N-CH 30V 62A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 24nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 62A · Input Capacitance (Ciss) @ Vds: 2417pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 87W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRF5210LPBF	International Rectifier	MOSFET P-CH 100V 38A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 230nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 38A · Input Capacitance (Ciss) @ Vds: 2780pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: TO-262	от 0,00	Доп. информация Искать в поставщиках
	SI4410DYTR	International Rectifier	MOSFET N-CH 30V 10A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1585pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRFU3910PBF	International Rectifier	MOSFET N-CH 100V 16A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 79W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLR8711CTRPBF	International Rectifier	MOSFET N-CH 25V 84A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 1640pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFR2905ZTRL	International Rectifier	MOSFET N-CH 55V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFR2407TR	International Rectifier	MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRLR7821CTRPBF	International Rectifier	MOSFET N-CH 30V 65A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 1030pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 75W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFL4105TRPBF	International Rectifier	MOSFET N-CH 55V 3.7A SOT223 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.7A · Input Capacitance (Ciss) @ Vds: 660pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00	Доп. информация Искать в поставщиках
	IRFP1405PBF	International Rectifier	MOSFET N-CH 55V 95A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 95A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 95A · Input Capacitance (Ciss) @ Vds: 5600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 310W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF1010ZLPBF	International Rectifier	MOSFET N-CH 55V 75A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 2840pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF5210PBF	International Rectifier	MOSFET P-CH 100V 40A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFZ24NS	International Rectifier	MOSFET N-CH 55V 17A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFR3412PBF	International Rectifier	MOSFET N-CH 100V 48A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 48A · Input Capacitance (Ciss) @ Vds: 3430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IRL1404SPBF	International Rectifier	MOSFET N-CH 40V 160A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 140nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 160A · Input Capacitance (Ciss) @ Vds: 6600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF3706PBF	International Rectifier	MOSFET N-CH 20V 77A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 35nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 77A · Input Capacitance (Ciss) @ Vds: 2410pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRF3205SPBF	International Rectifier	MOSFET N-CH 55V 110A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 146nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 3247pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7493TR	International Rectifier	MOSFET N-CH 80V 9.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 1510pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках

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