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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
IRF740

IRF740 — MOSFET N-CH 400V 10A TO-220

ПроизводительSTMicroelectronics
Вредные веществаRoHS   Без свинца
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C10A
FET PolarityN-Channel
FET FeatureStandard
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Встречается под наим.497-2931-5
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
STF21NM60NDSTMicroelectronicsMOSFET N-CH 600V 17A TO-220FP
Серия: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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STD8NM60NDSTD8NM60NDSTMicroelectronicsMOSFET N-CH 600V 7A DPAK
Серия: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STB70NF03LT4STB70NF03LT4STMicroelectronicsMOSFET N-CH 30V 70A D2PAK
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 1440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STD3NK80ZT4STD3NK80ZT4STMicroelectronicsMOSFET N-CH 800V 2.5A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 485pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STL80N4LLF3STL80N4LLF3STMicroelectronicsMOSFET N-CH 40V 80A POWERFLAT6X5
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 2530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 80W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerFlat™ (6 x 5)
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STD5NK40ZT4STD5NK40ZT4STMicroelectronicsMOSFET N-CH 400V 3A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 305pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STW27NM60NDSTMicroelectronicsMOSFET N-CH 600V 21A TO-247
Серия: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STW12NK95ZSTW12NK95ZSTMicroelectronicsMOSFET N-CH 950V 10A TO-247
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 950V  ·  Gate Charge (Qg) @ Vgs: 113nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STP7N52K3STMicroelectronicsMOSFET N-CH 525V 6.2A TO220
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 525V  ·  Current - Continuous Drain (Id) @ 25° C: 6.3A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STD60NF06T4STD60NF06T4STMicroelectronicsMOSFET N-CH 60V 60A DPAK
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 1810pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STB200NF04L-1STB200NF04L-1STMicroelectronicsMOSFET N-CH 40V 120A I2PAK
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 90nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 120A  ·  Input Capacitance (Ciss) @ Vds: 6400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STP180NS04ZCSTMicroelectronicsMOSFET N-CH CLAMPED 120A TO-220
Серия: SAFeFET™  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 33V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 120A  ·  Input Capacitance (Ciss) @ Vds: 4560pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STS4NF100STS4NF100STMicroelectronicsMOSFET N-CH 100V 4A 8-SOIC
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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STP20NM60ASTP20NM60ASTMicroelectronicsMOSFET N-CH 650V 20A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STD1NK80ZT4STD1NK80ZT4STMicroelectronicsMOSFET N-CH 800V 1A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 7.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STD5NK52ZDSTD5NK52ZDSTMicroelectronicsMOSFET N-CH 520V 4.4A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 520V  ·  Gate Charge (Qg) @ Vgs: 16.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 529pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STB9NK70ZT4STB9NK70ZT4STMicroelectronicsMOSFET N-CH 700V 7.5A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 700V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 1370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STD11NM60NDSTD11NM60NDSTMicroelectronicsMOSFET N-CH 600V 10A DPAK
Серия: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STS17NH3LLSTS17NH3LLSTMicroelectronicsMOSFET N-CH 30V 17A 8-SOIC
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1810pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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STF8NM60NDSTMicroelectronicsMOSFET N-CH 600V 7A TO-220FP
Серия: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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STB10NK60ZT4STB10NK60ZT4STMicroelectronicsMOSFET N-CH 600V 10A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STP18NM80STMicroelectronicsMOSFET N-CH 800V 17A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 2070pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STB75N20STB75N20STMicroelectronicsMOSFET N-CH 200V 75A D2PAK
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STB5NK50ZT4STB5NK50ZT4STMicroelectronicsMOSFET N-CH 500V 4.4A D2PAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 535pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STT2PF60LSTT2PF60LSTMicroelectronicsMOSFET P-CH 60V 2A SOT23-6
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 313pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-6
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