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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
HRF3205

- Габаритный чертеж

HRF3205 — MOSFET N-CH 55V 100A TO-220AB

ПроизводительFairchild Semiconductor
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs8 mOhm @ 59A, 10V
Drain to Source Voltage (Vdss)55V
Gate Charge (Qg) @ Vgs170nC @ 10V
Current - Continuous Drain (Id) @ 25° C100A
Input Capacitance (Ciss) @ Vds4000pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max175W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
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Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1285pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 110W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 150mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 6.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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NDP603ALNDP603ALFairchild SemiconductorMOSFET N-CH 30V 25A TO-220AB
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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FQI5N30TUFairchild SemiconductorMOSFET N-CH 300V 5.4A I2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.4A  ·  Input Capacitance (Ciss) @ Vds: 430pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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HUFA75329P3HUFA75329P3Fairchild SemiconductorMOSFET N-CH 55V 49A TO-220AB
Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 1060pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 128W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.4A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FDB6021PFairchild SemiconductorMOSFET P-CH 20V 28A TO-263AB
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 14A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1890pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 37W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FDB8876Fairchild SemiconductorMOSFET N-CH 30V 71A D2PAK
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 71A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FQD20N06TMFQD20N06TMFairchild SemiconductorMOSFET N-CH 60V 16.8A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 63 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16.8A  ·  Input Capacitance (Ciss) @ Vds: 590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FDPF44N25TFDPF44N25TFairchild SemiconductorMOSFET N-CH 250V 44A TO-220F
Серия: UniFET™  ·  Rds On (Max) @ Id, Vgs: 69 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 61nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 2870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 38W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FDD3682FDD3682Fairchild SemiconductorMOSFET N-CH 100V 32A D-PAK
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 32A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 95W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FQP1P50FQP1P50Fairchild SemiconductorMOSFET P-CH 500V 1.5A TO-220
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 63W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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FDS6673AZFDS6673AZFairchild SemiconductorMOSFET P-CH 30V 14.5A 8SOIC
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 14.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 118nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14.5A  ·  Input Capacitance (Ciss) @ Vds: 4480pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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FDB13AN06A0FDB13AN06A0Fairchild SemiconductorMOSFET N-CH 60V 62A TO-263AB
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 62A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 62A  ·  Input Capacitance (Ciss) @ Vds: 1350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FDS4080N3FDS4080N3Fairchild SemiconductorMOSFET N-CH 40V 13A 8-SOIC
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 1750pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
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FQB50N06LTMFairchild SemiconductorMOSFET N-CH 60V 52.4A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 21 mOhm @ 26.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 52.4A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FCPF22N60NTFCPF22N60NTFairchild SemiconductorMOSFET N-CH 600V 22A TO-220F
Серия: SupreMOS™  ·  Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 1950pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 39W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FQU2N50BTU_WSFairchild SemiconductorMOSFET N-CH 500V 1.6A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA , 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  Input Capacitance (Ciss) @ Vds: 230pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FDB8445FDB8445Fairchild SemiconductorMOSFET N-CH 40V 70A D2PAK
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 3805pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 92W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SSR1N60BTM_F080Fairchild SemiconductorMOSFET N-CH 600V 0.9A DPAK
Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 7.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 900mA  ·  Input Capacitance (Ciss) @ Vds: 215pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FDP5680Fairchild SemiconductorMOSFET N-CH 60V 40A TO-220
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 1850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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FDMS8672ASFDMS8672ASFairchild SemiconductorMOSFET N-CH 30V 18A POWER56
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 2600pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-PQFN, Power56
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FDS3672FDS3672Fairchild SemiconductorMOSFET N-CH 100V 7.5A 8-SOIC
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 2015pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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FDS7088N7FDS7088N7Fairchild SemiconductorMOSFET N-CH 30V 23A 8-SOIC
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 3 mOhm @ 23A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 3845pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
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FQA65N20Fairchild SemiconductorMOSFET N-CH 200V 65A TO-3P
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 32 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 310W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3PN-3
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