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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
FQT1N80TF_WS

- Габаритный чертеж

FQT1N80TF_WS — MOSFET N-CH 800V 0.2A SOT-223

ПроизводительFairchild Semiconductor
Вредные веществаRoHS   Без свинца
СерияQFET™
Rds On (Max) @ Id, Vgs20 Ohm @ 100mA, 10V
Drain to Source Voltage (Vdss)800V
Gate Charge (Qg) @ Vgs7.2nC @ 10V
Current - Continuous Drain (Id) @ 25° C200mA
Input Capacitance (Ciss) @ Vds195pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max2.1W
Mounting TypeSurface Mount
Package / CaseSOT-223 (3 leads + Tab), SC-73, TO-261AA
Встречается под наим.FQT1N80TF_WSDKR
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