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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
FQP6N60

FQP6N60 — MOSFET N-CH 600V 6.2A TO-220

ПроизводительFairchild Semiconductor
Вредные веществаRoHS   Без свинца
Обратите вниманиеСнят с производства - 09 сенt 2008
СерияQFET™
Rds On (Max) @ Id, Vgs1.5 Ohm @ 3.1A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs25nC @ 10V
Current - Continuous Drain (Id) @ 25° C6.2A
Input Capacitance (Ciss) @ Vds1000pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max130W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
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ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 125 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13.2A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 265 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 3290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 277W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.4A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.4A  ·  Input Capacitance (Ciss) @ Vds: 430pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 63 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16.8A  ·  Input Capacitance (Ciss) @ Vds: 590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FQU2N50BTU_WSFairchild SemiconductorMOSFET N-CH 500V 1.6A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA , 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  Input Capacitance (Ciss) @ Vds: 230pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FQI2N30TUFairchild SemiconductorMOSFET N-CH 300V 2.1A I2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.05A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.1A  ·  Input Capacitance (Ciss) @ Vds: 130pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.25A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 33W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 150mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 6.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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FQU2N50BTUFairchild SemiconductorMOSFET N-CH 500V 1.6A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA , 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  Input Capacitance (Ciss) @ Vds: 230pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FQAF16N25CFairchild SemiconductorMOSFET N-CH 250V 11.4A TO-3PF
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.7A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 53.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11.4A  ·  Input Capacitance (Ciss) @ Vds: 1080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 73W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3PF-3
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FQU1N60TUFairchild SemiconductorMOSFET N-CH 600V 1A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FQB7P06TMFairchild SemiconductorMOSFET P-CH 60V 7A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 410 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 295pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FQD2N60CTF_F080Fairchild SemiconductorMOSFET N-CH 600V 1.9A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 950mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.9A  ·  Input Capacitance (Ciss) @ Vds: 235pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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