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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

FQA7N80C — MOSFET N-CH 800V 7A TO-3P

ПроизводительFairchild Semiconductor
Вредные веществаRoHS   Без свинца
СерияQFET™
Rds On (Max) @ Id, Vgs1.9 Ohm @ 3.5A, 10V
Drain to Source Voltage (Vdss)800V
Gate Charge (Qg) @ Vgs35nC @ 10V
Current - Continuous Drain (Id) @ 25° C7A
Input Capacitance (Ciss) @ Vds1680pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max198W
Mounting TypeThrough Hole
Package / CaseTO-3P-3 (Straight Leads)
Аналогичные по характеристикам
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16.5A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.6A  ·  Input Capacitance (Ciss) @ Vds: 1680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 167W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1.05A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.1A  ·  Input Capacitance (Ciss) @ Vds: 660pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.6A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 230 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 142W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 120V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 1860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FQPF3P20FQPF3P20Fairchild SemiconductorMOSFET P-CH 200V 2.2A TO-220F
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 32W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FQB19N10LTMFairchild SemiconductorMOSFET N-CH 100V 19A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FQB10N20TMFairchild SemiconductorMOSFET N-CH 200V 10A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 21 mOhm @ 26.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 52.4A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 121W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.8A  ·  Input Capacitance (Ciss) @ Vds: 730pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FQU20N06TUFairchild SemiconductorMOSFET N-CH 60V 16.8A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 63 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16.8A  ·  Input Capacitance (Ciss) @ Vds: 590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FQA7N60Fairchild SemiconductorMOSFET N-CH 600V 7.7A TO-3P
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.9A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 1430pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 152W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P-3 (Straight Leads)
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FQB5P20TMFairchild SemiconductorMOSFET P-CH 200V 4.8A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.8A  ·  Input Capacitance (Ciss) @ Vds: 430pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FQA12N60Fairchild SemiconductorMOSFET N-CH 600V 12A TO-3P
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 6A,10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 240W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P-3 (Straight Leads)
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FQA5N90Fairchild SemiconductorMOSFET N-CH 900V 5.8A TO-3P
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2.9A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.8A  ·  Input Capacitance (Ciss) @ Vds: 1550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 185W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P-3 (Straight Leads)
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FQPF9N08FQPF9N08Fairchild SemiconductorMOSFET N-CH 80V 7A TO-220F
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 7.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 23W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FQI7N10LTUFairchild SemiconductorMOSFET N-CH 100V 7.3A I2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.3A  ·  Input Capacitance (Ciss) @ Vds: 290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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FQD12N20TMFQD12N20TMFairchild SemiconductorMOSFET N-CH 200V 9A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 910pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FQU2N60TUFairchild SemiconductorMOSFET N-CH 600V 2A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FQD2N40TMFQD2N40TMFairchild SemiconductorMOSFET N-CH 400V 1.4A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 700mA, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 5.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FQI4N80TUFairchild SemiconductorMOSFET N-CH 800V 3.9A I2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.95A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.9A  ·  Input Capacitance (Ciss) @ Vds: 880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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FQPF7N20FQPF7N20Fairchild SemiconductorMOSFET N-CH 200V 4.8A TO-220F
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.4A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.8A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 37W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FQP18N50V2FQP18N50V2Fairchild SemiconductorMOSFET N-CH 500V 18A TO-220
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 3290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 208W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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